Fig. 1. (Color online) Schematic diagram of triple metal double-gate TFET (n-type).

Fig. 2. (Color online) Surface potential variation along the position of channel from the p-type doped source to n-type doped drain with different L₁ : L₂ : L₃ ratio for V_GS = 0.25 V, V_DS = 0.5 V, and t_ox = 2 nm.

Fig. 3. (Color online) Lateral electric field along the position of channel from the p- type doped source to the n- type doped drain with different L₁ : L₂ : L₃ ratio for V_GS = 0.25 V, V_DS = 0.5 V, and t_ox = 2 nm.

Fig. 4. (Color online) Surface potential across channel length L = 120 nm and V_GS = 0.25 V with different V_DS = 0.25, 0.5, and 1 V.

Fig. 5. (Color online) Lateral electric field across the channel length L = 120 nm, V_GS = 0.25 V for different V_DS = 0.25, 0.5 and 1 V.

Fig. 6. (Color online) Surface potential along the channel with length L = 120 nm and V_DS = 0.5 V for different V_GS = 0.2, 0.4, and 0.6 V.

Fig. 7. (Color online) Lateral electric field profile for channel length L = 120 nm and V_DS = 0.5 V for different gate voltages.

Fig. 8. (Color online) Vertical electric field along the channel for V_GS = 0.25 V, V_DS = 0.5 V, and t_ox = 2 nm.

Fig. 9. (Color online) I_d–V_GS characteristics on a linear scale for V_DS = 0.5 V and t_si = 5 nm for different oxide thickness.

Fig. 10. (Color online) I_d–V_GS characteristics on a linear scale for V_DS = 0.5 V and t_ox = 2 nm for different channel thickness.

Fig. 11. (Color online) I_d–V_GS characteristics on a linear scale for V_DS = 0.5 V and for a three different metal work function.