Fig. 1. Scheme diagram of the ASPPD, where dITO, dMAPbI3, dAg, W, and θ are the thicknesses of ITO and MAPbI3 layers, side length of Ag, period of the grating, and polarization angle, respectively.

Fig. 2. (a), (b) J of the photodetector versus dMAPbI3 and dAg under TE and TM incidences with λ=500  nm, P=10  W/m2, and Vd=0  V. (c) Spectral responses of the device with dMAPbI3=94  nm and dAg=55  nm for TE, TM, and unpolarized incidences. Insets (I–VI): distributions of E for λ of 350, 500, and 570 nm. (d), (e) Distributions of G and the vectorial current density (red arrows) in the MAPbI3 layer under TE and TM incidences with λ=500  nm. Note that the lengths of the red arrows are taken as logarithm for the convenience of observation.

Fig. 3. (a) J and JTM/JTE versus P under TM and unpolarized incidences. (b) J versus polarization angle θ and (c) temporal response of the device, where both TE and TM incidences are included.

Fig. 4. (a) Full-functional PELG system. (b), (d) Truth tables of different logic functions. (c), (e) Corresponding electrical output responses for different logic configurations. Note that the red dotted boxes in patterns (d) and (e) display, respectively, the truth table and electrical output of the NOT gate.