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Chinese Journal of Lasers, Volume. 45, Issue 6, 0602006(2018)

Silicon Refinement of TC4 Grains by Induction Heating Assisted Laser Cladding Deposition

Lijun Li1, Yuyue Wang1、*, Anfeng Zhang2, Chaoyang Liang2, Qingyu Li2, Jinzhi Zhang2, and Xiaoxing Zhang1
Author Affiliations
  • 1 State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
  • 2 State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
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    AbstractGet PDF(in Chinese)
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    References (13)
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    Figures & Tables(12)
    Schematic of induction heating assisted laser cladding deposition system[9]

    Fig. 1. Schematic of induction heating assisted laser cladding deposition system[9]

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    Micrographs of TC4 alloys with different Si contents. (a) 0; (b) 0.5%; (c) 1.0%; (d) 1.5%; (e) 2.0%; (f) 3.0%

    Fig. 2. Micrographs of TC4 alloys with different Si contents. (a) 0; (b) 0.5%; (c) 1.0%; (d) 1.5%; (e) 2.0%; (f) 3.0%

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    Width of columnar crystal of TC4 alloy versus Si content

    Fig. 3. Width of columnar crystal of TC4 alloy versus Si content

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    Schematic of Si refining columnar crystals of titanium alloy. (a) Formation of β nuclei; (b) Si induced constitutional supercooling; (c) eutectoid reaction; (d) silicide precipitated along grain boundary

    Fig. 4. Schematic of Si refining columnar crystals of titanium alloy. (a) Formation of β nuclei; (b) Si induced constitutional supercooling; (c) eutectoid reaction; (d) silicide precipitated along grain boundary

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    SEM morphology and EDS analysis results of TC4 alloy with Si content of 1.0%

    Fig. 5. SEM morphology and EDS analysis results of TC4 alloy with Si content of 1.0%

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    Surface reticulation silicide of TC4 alloy with Si content of 3.0%

    Fig. 6. Surface reticulation silicide of TC4 alloy with Si content of 3.0%

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    Micromorphologies of TC4 alloys with different Si contens by induction heating assisted laser cladding deposition. (a) 0; (b) 0.5%; (c) 1.0%; (d) 1.5%; (e) 2.0%

    Fig. 7. Micromorphologies of TC4 alloys with different Si contens by induction heating assisted laser cladding deposition. (a) 0; (b) 0.5%; (c) 1.0%; (d) 1.5%; (e) 2.0%

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    CET simulation curves of TC4 alloy[11]

    Fig. 8. CET simulation curves of TC4 alloy[11]

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    Continuous cooling transformation curves of TC4 alloy[12]

    Fig. 9. Continuous cooling transformation curves of TC4 alloy[12]

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    SEM image of TC4 alloy with Si content of 1.5% by induction heating assisted laser cladding deposition

    Fig. 10. SEM image of TC4 alloy with Si content of 1.5% by induction heating assisted laser cladding deposition

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    • Table 1. Parameters of raw material powders

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      Table 1. Parameters of raw material powders

      PowderPreparationmethodMorphologyParticlesize /μm
      TC4Plasma rotationelectrode processSpherical45-100
      SiPneumaticmillingIrregular30

    • Table 2. Process parameters of laser cladding deposition

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      Table 2. Process parameters of laser cladding deposition

      SampleLaserpower /wScanningspeed /(mm·s-1)Powderfeeding rate /(g·min-1)Overlappingdistance /mmZ increment /mmInductionheatingtemperature /℃
      As-depositedstate21082.50.250.080
      Inductionheating state21082.50.250.08900
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    Lijun Li, Yuyue Wang, Anfeng Zhang, Chaoyang Liang, Qingyu Li, Jinzhi Zhang, Xiaoxing Zhang. Silicon Refinement of TC4 Grains by Induction Heating Assisted Laser Cladding Deposition[J]. Chinese Journal of Lasers, 2018, 45(6): 0602006

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    Paper Information

    Category: laser manufacturing

    Received: Dec. 19, 2017

    Accepted: --

    Published Online: Jul. 5, 2018

    The Author Email: Wang Yuyue (wangyy@xjtu.edu.cn)

    DOI:10.3788/CJL201845.0602006

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology