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Journal of Semiconductors, Volume. 40, Issue 2, 022801(2019)

Room-temperature continuous-wave operation of GaN-based blue-violet laser diodes with a lifetime longer than 1000 h

Feng Liang1, Jing Yang1, Degang Zhao1,2, Zongshun Liu1, Jianjun Zhu1,2, Ping Chen1, Desheng Jiang1, Yongsheng Shi1, Hai Wang1, Lihong Duan1, Liqun Zhang3, and Hui Yang3
Author Affiliations
  • 1State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
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    Schematic diagram of the epitaxial structure for the GaN-based blue-violet LDs.

    Fig. 1. Schematic diagram of the epitaxial structure for the GaN-based blue-violet LDs.

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    (Color online) The optical spectrum of stimulated emission for a GaN-based blue-violet LD. The inset shows the far field pattern of laser beam.

    Fig. 2. (Color online) The optical spectrum of stimulated emission for a GaN-based blue-violet LD. The inset shows the far field pattern of laser beam.

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    (Color online) Power–current–voltage (P–I–V) curves of a GaN-based blue-violet LD at room temperature.

    Fig. 3. (Color online) Power–current–voltage (P–I–V) curves of a GaN-based blue-violet LD at room temperature.

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    (Color online) (a) Current–voltage characteristics obtained for different values of R between 215 and 260 μm, and (b) the measured data of total resistance (Rt, black squares) as a function of ln(R/r) and the fitting line (red), by using the circular transmission line model for p-GaN Ohmic contact in the GaN-based blue-violet laser diode. The specific contact resistance is as low as 1.1 × 10−6 Ω·cm2.

    Fig. 4. (Color online) (a) Current–voltage characteristics obtained for different values of R between 215 and 260 μm, and (b) the measured data of total resistance (Rt, black squares) as a function of ln(R/r) and the fitting line (red), by using the circular transmission line model for p-GaN Ohmic contact in the GaN-based blue-violet laser diode. The specific contact resistance is as low as 1.1 × 10−6 Ω·cm2.

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    Optical power of blue-violet LD as a function of the aging time with a fixed injection current at room temperature.

    Fig. 5. Optical power of blue-violet LD as a function of the aging time with a fixed injection current at room temperature.

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    Feng Liang, Jing Yang, Degang Zhao, Zongshun Liu, Jianjun Zhu, Ping Chen, Desheng Jiang, Yongsheng Shi, Hai Wang, Lihong Duan, Liqun Zhang, Hui Yang. Room-temperature continuous-wave operation of GaN-based blue-violet laser diodes with a lifetime longer than 1000 h[J]. Journal of Semiconductors, 2019, 40(2): 022801

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    Paper Information

    Category: Articles

    Received: Jul. 3, 2018

    Accepted: --

    Published Online: Sep. 18, 2021

    The Author Email:

    DOI:10.1088/1674-4926/40/2/022801

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology