Universal silicon ring resonator for error-free transmission links

Junbo Zhu; Weiwei Zhang; Ke Li; Bharat Pant; Martin Ebert; Xingzhao Yan; Mehdi Banakar; Dehn T. Tran; Callum G. Littlejohns; Fuwan Gan; Graham Reed; David J. Thomson

doi:10.1364/PRJ.509237

Photonics Research, Volume. 12, Issue 4, 701(2024)

Universal silicon ring resonator for error-free transmission links

Junbo Zhu^1,2,3, Weiwei Zhang^1、*, Ke Li^1,4, Bharat Pant¹, Martin Ebert¹, Xingzhao Yan¹, Mehdi Banakar¹, Dehn T. Tran¹, Callum G. Littlejohns¹, Fuwan Gan², Graham Reed¹, and David J. Thomson^1,5

Author Affiliations

¹Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK

²National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

³University of Chinese Academy of Sciences, Beijing 100049, China

⁴Peng Cheng Laboratory, Shenzhen, China

⁵e-mail: d.thomson@soton.ac.uk

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Figures & Tables(15)

Fig. 1. Schematic diagram of an error-free transmission link enabled by a universal MR, and its application to scale up for 32λ in O and C band for a 1.6 Tb/s error free link (Appendix C).

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Fig. 2. Simulated (a) doping losses, (b) modulation efficiencies, (c) electric field density distribution, and (d) confinement factors of the low doping vertical junction (L-V), medium doping vertical junction (M-V), high doping vertical junction (H-V), and medium doping L-shape junction (L-shape) produced by using Silvaco TCAD and Lumerical.

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Fig. 3. Measured (a) transmission spectrum and (b) phase change efficiency of 10 μm radius MR.

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Fig. 4. Measured (a) DC electro-optical wavelength shifts and (b) DC ER versus one level losses with different voltage swings. (c) Simulated conduction and valence band diagrams of the Si L-shape PN junction at different bias voltages. (d) Measured responsivity versus bias voltage.

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Fig. 5. Measured (a) dark and total current versus bias voltage for different optical input powers, (b) responsivity versus bias voltage at different input optical powers, (c) responsivity versus input optical power at different bias voltages, (d) total current at different voltages and optical input powers.

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Fig. 6. Measured eye diagrams of MR-APD at bit rates of (a) 40 Gb/s, Pin=6 dBm, and MOD ER=7.1 dB; (b) 50 Gb/s, Pin=6.2 dBm, and MOD ER=8.1 dB, with 3 taps FFE; (c) 56 Gb/s, Pin=6.2 dBm, and MOD ER=9 dB, with 3 taps FFE. Eye diagrams of MR-MOD at bit rates of (d) 40 Gb/s, ER=8.3 dB; (e) 50 Gb/s, ER=8.1 dB; (f) 56 Gb/s, ER=9 dB. Eye diagrams of LN MZI-MOD at bit rates of (g) 40 Gb/s, ER=8.3 dB; (h) 50 Gb/s, ER=8.1 dB; (i) 56 Gb/s, ER=9 dB.

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Fig. 7. Measured (a) 40 Gb/s and (b) 50 Gb/s NRZ BER with different optical power for the MR-APD, MR-MOD, and LN MZI-MOD.

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Fig. 8. Measured SNR of the MR-MOD and LN MZI-MOD at different bit rates with the same ER of 8 dB.

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Fig. 9. Measured eye diagrams of the MR-APD at 40 Gb/s and Pin=6 dBm with (a) MOD ER=8.36 dB and (b) MOD ER=3.4 dB; (c) 40 Gb/s NRZ BER of the MR-APD decreases with an increasing modulated optical ER of the LN MZI-MOD.

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Fig. 10. (a)–(c) Schematic diagrams of doping micro-ring to form L-shape PN junctions with 6 rotations.

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Fig. 11. Experimental setup for eye diagram and BER measurements of (a) MR-APD and (b) MR-MOD.

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Fig. 12. Measured eye diagrams of (a) LN-MZI-MOD at 50 Gb/s, (b) MR-APD at 50 Gb/s, (c) LN-MZI-MOD at 80 Gb/s, (d) MR-APD at 80 Gb/s with 5 taps FFE and eye average, (e) RF signal before the RF probe at 80 Gb/s, (f) MR-MOD at 80 Gb/s, (g) RF signal at 112 Gb/s, (h) MR-MOD at 112 Gb/s with 5 taps FFE in the DCA.

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Fig. 13. MR’s four FSR channels have to be matched with MUX/De-MUX channels. Four MRs operate in each channel, and 16 in total for the C and O band.

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Table 1. Performance Summary and Comparison between State-of-the-Art Ring-Based CMOS Optical Links and Our Work

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Table 1. Performance Summary and Comparison between State-of-the-Art Ring-Based CMOS Optical Links and Our Work

	[37]-2012	[38]-2019	[39]-2020	[4]-2021	[40]-2023	This Work
Integration	130 nm SOI driver, TIA	14 nm FinFET driver, TIA	16 nm FinFET driver, TIA	28 nm CMOS driver, TIA	CMOS driver, TIA	Unpackaged
Laser power	7.6 dBm	$> 8 dBm$	/	6 dBm	8.1 dBm	12 dBm
Wavelength	C band	O band	C band	O band	O band	C band
Tx MOD	Ring	Ring	GeSi EAM	Ring	Ring	Ring
Tx driver	2 V	1.4 V	1.8 V	2.6 V	1.3 V	2.5 V
Tx BER	$1 \times 10^{- 12}$ 25 Gb/s w/pre-emphasis	$OMA = - 10 dBm$ 40 Gb/s	$< 1 \times 10^{- 12}$ 50 Gb/s w/pre-equalization	$< 1 \times 10^{- 12}$ 50 Gb/s	$< 1 \times 10^{- 12}$ 40 Gb/s	$1 \times 10^{- 15}$ 56 Gb/s
Tx ER	6.9 dB	4.6 dB	$> 3 dB$	4.3 dB	5.3 dB	$> 8 dB$
Rx PD	Ge PD	Ge PD	GeSi PD	Si ring PD	Ge PD	Si ring PD
PD responsivity	0.8 A/W	1 A/W	1 A/W	0.23 A/W	0.94 A/W	0.84 A/W
Rx BER	$10^{- 12}$ 25 Gb/s	$< 1 \times 10^{- 12}$ 38 Gb/s	$< 1 \times 10^{- 12}$ 50 Gb/s w/CTLE	$< 1 \times 10^{- 12}$ 50 Gb/sFFE + DFE	$< 1 \times 10^{- 12}$ 40 Gb/s	$1 \times 10^{- 14}$ 40 Gb/s
Rx BER	$10^{- 12}$ 25 Gb/s	$< 1 \times 10^{- 12}$ 38 Gb/s	$< 1 \times 10^{- 12}$ 50 Gb/s w/CTLE	$< 1 \times 10^{- 12}$ 50 Gb/sFFE + DFE	$< 1 \times 10^{- 12}$ 40 Gb/s	$3 \times 10^{- 12}$ 50 Gb/s with 3 taps FFE

Table 2. Performance Summary and Comparison between State-of-the-Art Universal Devices and Our Work
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Table 2. Performance Summary and Comparison between State-of-the-Art Universal Devices and Our Work
Type Responsivity (A/W) $V_{π} L$ ( $V \cdot cm$ ) Bandwidth (GHz)
Si-ring [21] $5.9 \times 10^{- 3}$ / $\sim 12$
Si-ring [24,25] $48 \times 10^{- 3}$ 1.7 20
Si-MZI [22,23] 0.54 0.81 26
Si-ring [27,28] 0.53 1 25.5
Si-ring [29] 0.21 0.825 35
Our work 0.84 0.4 $> 35$

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Junbo Zhu, Weiwei Zhang, Ke Li, Bharat Pant, Martin Ebert, Xingzhao Yan, Mehdi Banakar, Dehn T. Tran, Callum G. Littlejohns, Fuwan Gan, Graham Reed, David J. Thomson, "Universal silicon ring resonator for error-free transmission links," Photonics Res. 12, 701 (2024)

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Paper Information

Category: Silicon Photonics

Received: Oct. 13, 2023

Accepted: Dec. 21, 2023

Published Online: Mar. 20, 2024

The Author Email: Weiwei Zhang (weiwei.zhang@soton.ac.uk)

DOI:10.1364/PRJ.509237

CSTR:32188.14.PRJ.509237

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Performance Summary and Comparison between State-of-the-Art Ring-Based CMOS Optical Links and Our Work

Table 1. Performance Summary and Comparison between State-of-the-Art Ring-Based CMOS Optical Links and Our Work

Table 2. Performance Summary and Comparison between State-of-the-Art Universal Devices and Our Work

Table 2. Performance Summary and Comparison between State-of-the-Art Universal Devices and Our Work