[1] [1] Zhou Shouhuan. Thermal management in the solid state laser［J］. Chinese J Quantum Electronics, 2005, 22(4): 497-509.

[2] [2] Y Sato, T Taira, N Pavel, et al.. Laser operation with near quantum-defect slope efficiency in Nd:YVO4 under direct pumping into the emitting level［J］. Appl Phys Lett, 2003, 82(6): 844-846.

[3] [3] Wu Xingsheng, Gao Jiancun, Tang Xinchun, et al.. 20.6 W Nd:YVO4 thin disk laser with laser-diode direct upper-state pumping［J］. Chinese J Lasers, 2012, 39(12): 1202001.

[4] [4] Ai Qingkang, Chang Liang, Chen Meng, et al.. Thermal analysis of Nd:YVO4 pumped by 808 nm and 888 nm［J］. Chinese J Lasers, 2011, 38(4): 0402001.

[5] [5] Fangqin Li, Nan Zong, Zhichao Wang, et al.. Passively mode-locked grown-together composite YVO4/Nd:YVO4 crystal laser with a semiconductor saturable absorber mirror under 880 nm direct pumping［J］. Chin Opt Lett, 2011, 9(4): 041405.

[6] [6] He Kunna, Wei Zhiyi, Zhang Zhiguo, et al.. Overview on laser diode pumped solid-state laser with direct pumping scheme［J］. Chinese J Lasers, 2009, 36(7): 1679-1685.

[7] [7] Zheng Yaohui, Wang Yajun, Peng Kunchi. Single-end pumping, single-frequency Nd:YVO4/LBO laser with output power of 21.5 W［J］. Chinese J Lasers, 2012, 39(6): 0602011.

[8] [8] V Lupei, N Pavel, T Taira. 1064 nm laser emission of highly doped Ndyttrium aluminum under 885 nm diode laser pumping［J］. Appl Phys Lett, 2002, 80(23): 4309-4312.

[9] [9] S Goldring, R Lavi. NdYAG laser pumped at 946 nm［J］. Opt Lett, 2008, 33(7): 669-671.

[10] [10] D Sangla, F Balembois, P Georges. NdYAG laser diode-pumped directly into the emitting level at 938 nm［J］. Opt Express, 2009, 17(12): 10091-10097.

[11] [11] D Sangla, M Castaing, F Balembois, et al.. Highly efficient Nd:YVO4 laser by in-band diode pumping at 914 nm［J］. Opt Lett, 2009, 34(14): 2159-2161.

[12] [12] X Délen, F Balembois, O Musset, et al.. Characteristics of laser operation at 1064 nm in Nd:YVO4 under diode pumping at 808 and 914 nm［J］. J Opt Soc Am B, 2011, 28(1): 52-57.

[13] [13] Y F Chen, C C Liao, Y P Lan, et al.. Determination of the Auger upconversion rate in fiber-coupled diode end-pumped NdYAG and Nd:YVO4 crystals［J］. Appl Phys B, 2000, 70(4): 487-490.

[14] [14] R Fluck, B Braun, E Gini, et al.. Passively Q-switched 1.34-μm Nd:YVO4 microchip laser with semiconductor saturable-absorber mirrors［J］. Opt Lett, 1997, 22(13): 991-993.

[15] [15] X Délen, F Balembois, P Georges. Temperature dependence of the emission cross section of Nd:YVO4 around 1064 nm and consequences on laser operation［J］. J Opt Soc Am B, 2011, 28(5): 972-976.

[16] [16] G Turri, H P Jenssen, F Cornacchia, et al.. Temperature-dependent stimulated emission cross section in Nd3+YVO4 crystals［J］. J Opt Soc Am B, 2009, 26(11): 2084-2088.