Researching | Piezoelectric constant temperature dependence in strained [111]-oriented zinc-blende MQW-SOAs

Chinese Optics Letters, Volume. 21, Issue 9, 092501(2023)

Piezoelectric constant temperature dependence in strained [111]-oriented zinc-blende MQW-SOAs

Horacio Soto-Ortiz^* and Gerson Torres-Miranda

Author Affiliations

Applied Physics Division, Center for Scientific Research and Higher Education of Ensenada, Ensenada 22860, Mexico

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References(17)

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[2] H. Soto, M. A. Tong, J. C. Domínguez, R. Muraoka. Demonstration of an all-optical feed-forward delay line buffer using the quadratic Stark effect and two-photon absorption in an SOA. Opt. Express, 25, 22066(2017).

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[4] H. Soto-Ortiz, G. Torres-Miranda, R. Muraoka-Espíritu. Study of the quantum-confined Stark effect in an unbiased [111]-oriented multi-quantum well semiconductor optical amplifier. Opt. Commun., 529, 129081(2023).

[5] G. Bester, X. Wu, D. Vanderbilt, A. Zunger. Importance of second-order piezoelectric effects in zinc-blende semiconductors. Phys. Rev. Lett., 96, 187602(2006).

[6] J. D. Bruno, R. L. Tober. Effects of the piezoelectric field on quantum-confined Stark effect in (111)B InGaAs quantum-well structure. J. Appl. Phys., 85, 2221(1999).

[7] S. Cho, A. Majerfeld. Temperature dependence of excitonic properties of (111)B InGaAs/GaAs piezoelectric and pyroelectric multiquantum wells. J. Appl. Phys., 106, 023527(2009).

[8] G. Gonzalez de la Cruz, A. Calderon Arenas, H. Herrera. Internal electric-field and segregation effects on luminescence properties of quantum wells. J. Appl. Phys., 98, 023501(2005).

[9] M. Moran, H. Meidia, T. Fleischmann, D. J. Norris, G. J. Rees, A. G. Cullis, M. Hopkinson. Indium segregation in (111)B GaAs-InxGa1-xAs quantum wells determined by transmission electron microscopy. J. Phys. D, 34, 1943(2001).

[10] P. Ballet, P. Disseix, J. Leymarie, A. Vasson, A.-M. Vasson, R. Grey. The determination of e14 in (111)B-grown (In,Ga)As/GaAs strained layers. Thin Solid Films, 336, 354(1998).

[11] H. Soto-Ortiz, G. Torres-Miranda. Direct determination of the piezoelectric field using the quantum-confined Stark effect in a strained [111]-oriented zinc-blende MQW-SOA. AIP Adv., 12, 105005(2022).

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[13] J. J. Sánchez, J. I. Izpura, J. M. G. Tijero, E. Muñoz, S. Cho, A. Majerfeld. Confirmation of the pyroelectric coefficient of strained InxGa1-xAs/GaAs quantum well structures grown on (111)B GaAs by differential photocurrent spectroscopy. J. Appl. Phys., 91, 3002(2002).

[14] S. Cho, J. Kim, A. Sanz-Hervás, A. Majerfeld, G. Patriarche, B. W. Kim. Characterization of piezoelectric and pyroelectric properties of MOVPE-grown strained (111)A InGaAs/GaAs QW structures by modulation spectroscopy. Phys. Status Solidi A, 195, 260(2003).

[15] T. B. Bahder, R. L. Tober, J. D. Bruno. Temperature-dependent polarization in [111] InxGa1-xAs-AlxGa1-xAs quantum wells. Phys. Rev. B, 50, 2731(R)(1994).

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Horacio Soto-Ortiz, Gerson Torres-Miranda, "Piezoelectric constant temperature dependence in strained [111]-oriented zinc-blende MQW-SOAs," Chin. Opt. Lett. 21, 092501 (2023)

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Paper Information

Category: Optoelectronics

Received: Feb. 21, 2023

Accepted: May. 31, 2023

Published Online: Aug. 28, 2023

The Author Email: Horacio Soto-Ortiz (hsoto@cicese.mx)

DOI:10.3788/COL202321.092501

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology