[1] [1] KIROVSKAYA I A, FILATOVA T N, NOR P E. Multicomponent diamond-like semiconductors based on the InBV-CdS system: bulk and surface properties［J］. Semiconductors, 2021, 55(2): 228-233.

[2] [2] ZHANG X L, SUN W G, ZHANG L, et al. Temperature-dependent characteristics of Pt Schottky contacts on n-type HgInTe［J］. Semiconductor Science and Technology, 2008, 23(10): 105005.

[3] [3] MASLYANCHUK O L, KOSYACHENKO L A, GERMAN I I, et al. Electrical and optical properties of Hg3In2Te6 single crystals［J］. Physica Status Solidi C, 2009, 6(5): 1154-1157.

[4] [4] LEUTE V, SCHMIDTKE H M. Thermodynamics and kinetics of the quasibinary system Hg3-3kIn2kTe3-I. Investigations by X-ray diffraction and differential thermoanalysis［J］. Journal of Physics and Chemistry of Solids, 1988, 49(4): 409-420.

[7] [7] MALIK A I, VIEIRA M, FERNANDES M, et al. Near-infrared photodetectors based on a HgInTe-semiconductor compound［C］//SPIE Proceedings, Photodetectors: Materials and Devices IV. San Jose, CA. SPIE, 1999.

[8] [8] KOSYACHENKO L A, PARANCHICH Y S, MAKOGONENKO V N, et al. Electrical performance of HgInTe surface-barrier photodiodes［J］. Technical Physics, 2003, 48(5): 647-650.

[9] [9] KOSYACHENKO L A, RARENKO I M, SKLYARCHUK E F, et al. Electrical characteristics of the ITO/HgInTe photodiodes［J］. Semiconductors, 2006, 40(5): 554-557.

[11] [11] SUN J, FU L, WANG Y Y, et al. Effect of Ar+ ion etching treatment on the surface work function of Hg3In2Te6 wafer［J］. Journal of Electron Spectroscopy and Related Phenomena, 2013, 187: 49-52.

[12] [12] SUN J, FU L, WANG Y Y, et al. Study of Au/Hg3In2Te6 interface by synchrotron radiation photoemission spectroscopy［J］. Journal of Applied Physics, 2013, 114(8): 083719.

[13] [13] SUN J, FU L, LIU H W, et al. On the morphology and crystallography of Hg5In2Te8 precipitation in Hg3In2Te6［J］. Journal of Alloys and Compounds, 2014, 601: 298-306.

[14] [14] SUN J, FU L, LIU H W, et al. Interpretation of the vacancy-ordering controlled growth morphology of Hg5In2Te8 precipitates in Hg3In2Te6 single crystals by TEM observation and crystallographic calculation［J］. Journal of Alloys and Compounds, 2015, 622: 206-212.

[15] [15] LI Y P, FU L, WANG X Z, et al. Effect of passivation on the electrical properties of Au/Hg3In2Te6 Schottky contact［J］. Journal of Nanoscience and Nanotechnology, 2015, 15(9): 7121-7124.

[16] [16] LI Y P, FU L, SUN J. The modification of electrical properties of Au/n-Hg3In2Te6 Schottky contact by the introduction of ITO interlayer［J］. Current Applied Physics, 2016, 16(6): 623-627.

[17] [17] SHAW D, CAPPER P. Extrinsic doping［M］//Mercury Cadmium Telluride. Chichester, UK: John Wiley & Sons, Ltd, 2010: 317-337.

[18] [18] WEI S H, ZHANG S B. Chemical trends of defect formation and doping limit in II-VI semiconductors: the case of CdTe［J］. Physical Review B, 2002, 66(15): 155211.

[19] [19] SUN L Z, CHEN X S, ZHAO J J, et al. Electronic properties and chemical trends of the arsenic in situ impurities in Hg1-xCdxTe: first-principles study［J］. Physical Review B, 2007, 76(4): 045219.

[20] [20] HAN J L, SUN L Z, QU X D, et al. Electronic properties of the Au impurity in Hg0.75Cd0.25Te: first-principles study［J］. Physica B: Condensed Matter, 2009, 404(1): 131-137.

[21] [21] BHATTACHARYA S K, KSHIRSAGAR A. Ab initio calculations of structural and electronic properties of CdTe clusters［J］. Physical Review B, 2007, 75(3): 035402.

[24] [24] SPENCER P M. The semiconducting properties of HgTe-In2Te3 alloys［J］. British Journal of Applied Physics, 1964, 15(6): 625-632.

[25] [25] SHI S X, ZHU L G, JIA L N, et al. Ab-initio study of alloying effects on structure stability and mechanical properties of α-Nb5Si3［J］. Computational Materials Science, 2015, 108: 121-127.

[26] [26] GHARAATI A, ESMAEILI F. Bandgap structure and density of states of two-dimensional magnetized plasma photonic crystals［J］. International Journal of Modern Physics B, 2022, 36(20): 2250124.

[27] [27] NASAR A, SHAMSUDDIN M. Thermodynamic investigations of HgTe［J］. Journal of the Less Common Metals, 1990, 161(1): 87-92.

[28] [28] RABENOK E V, GALANOVICH M V, NOVIKOV G F, et al. Effect of self-compensation on the electron lifetime in gallium-doped cadmium telluride［J］. Semiconductors, 2009, 43(7): 846-851.