Source-field-plated Ga<sub>2</sub>O<sub>3</sub> MOSFET with a breakdown voltage of 550 V

Yuanjie Lü; Xubo Song; Zezhao He; Yuangang Wang; Xin Tan; Shixiong Liang; Cui Wei; Xingye Zhou; Zhihong Feng

doi:10.1088/1674-4926/40/1/012803

Journal of Semiconductors, Volume. 40, Issue 1, 012803(2019)

Source-field-plated Ga₂O₃ MOSFET with a breakdown voltage of 550 V

Yuanjie Lü, Xubo Song, Zezhao He, Yuangang Wang, Xin Tan, Shixiong Liang, Cui Wei, Xingye Zhou, and Zhihong Feng

National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

show less

Figures & Tables(4)

Fig. 1. (Color online) Schematic cross section of the fabricated Ga₂O₃ MOSFET with L_gd of 4 μm.

Download full size

View in Article

Fig. 2. (Color online) (a) DC output and (b) transfer characteristics of the Ga₂O₃ MOSFET with L_gd of 4 μm.

Download full size

View in Article

Fig. 3. (Color online) Three-terminal off-state breakdown characteristics for the Ga₂O₃ MOSFET with and without source-field plate.

Download full size

View in Article

Fig. 4. (Color online) Breakdown characteristics for the Ga₂O₃ MOSFET with L_gd of (a) 8 μm and (b) different gate-to-drain length.

Download full size

View in Article

Tools

Get Citation

Copy Citation Text

Yuanjie Lü, Xubo Song, Zezhao He, Yuangang Wang, Xin Tan, Shixiong Liang, Cui Wei, Xingye Zhou, Zhihong Feng. Source-field-plated Ga₂O₃ MOSFET with a breakdown voltage of 550 V[J]. Journal of Semiconductors, 2019, 40(1): 012803

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Articles

Received: Jun. 7, 2018

Accepted: --

Published Online: Sep. 18, 2021

The Author Email:

DOI:10.1088/1674-4926/40/1/012803

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology