Chinese Journal of Lasers, Volume. 30, Issue s1, 25(2003)
Dynamic Process of the Pulsed Laser Ablated Carbon Plasma
[1] [1] W. T. Lin, L. C. Meng, G. J. Chen et al.. Epitaxial growth of cubic A1N films on (100) silicon and (111) silicon by pulsed laser ablation[J]. Appl. Phys. Lett., 1995, 66(16):2066-2068
[2] [2] Yu. A. Bokov, I. P. Pronin, T. A. Shaplygina et al.. C-oriented SrBi2Nb2O9, films grown on YBa2Cu3O72 d/SrTiO3 and NdGaO3[J] Phys. Solid State, 1997, 39(4): 598-601
[3] [3] C. Niu, Υ. Z. Lu, C. M.lieber. Experimental realization of the covalent solid carbon nitride [J], Science, 1993, 261:334-337
[4] [4] W. Yu, S. F. Wang, L. Z. Zhang et al.. Carbon nitride thin films deposition by plasma assisted Nd:YAG laser ablation Graphite in N2+H2atmosphere [J], Chinese J. Lasers, 2001, B10(6): 455-459
[5] [5] H. R. Griem. Spectral line broadening by plasmas [M], New York: Academic Press, 1997
Get Citation
Copy Citation Text
FU Guang-sheng, YU Wei, LIANG Bao-lai, HAN Li. Dynamic Process of the Pulsed Laser Ablated Carbon Plasma[J]. Chinese Journal of Lasers, 2003, 30(s1): 25
Category: laser manufacturing
Received: --
Accepted: --
Published Online: Jan. 29, 2013
The Author Email:
CSTR:32186.14.