Laser & Optoelectronics Progress, Volume. 55, Issue 5, 051603(2018)

Effect of Rapid Thermal Annealing on Structural and Luminescence Properties of GaAs/AlGaAs Quantum Wells

Min Zhi, Xuan Fang*; , Shouzhu Niu, Dan Fang, Jilong Tang, Dengkui Wang, Xinwei Wang, Xiaohua Wang, and Zhipeng Wei
Author Affiliations
  • State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, Jilin 130022, China
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    Figures & Tables(5)
    Structural parameters of samples
    (a) XRD patterns of different samples; (b) FWHM and +1 diffraction peak intensity of samples under different annealing temperatures
    PL scanning test results of different samples. (a) Luminous intensity; (b) FWHM
    PL spectrum comparison between untreated sample and RTA treated samples at room temperature
    (a) Normalized peak-differentiating and fitting diagram of untreated sample and RTA treated samples; (b) band splitting graph
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    Min Zhi, Xuan Fang, Shouzhu Niu, Dan Fang, Jilong Tang, Dengkui Wang, Xinwei Wang, Xiaohua Wang, Zhipeng Wei. Effect of Rapid Thermal Annealing on Structural and Luminescence Properties of GaAs/AlGaAs Quantum Wells[J]. Laser & Optoelectronics Progress, 2018, 55(5): 051603

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    Paper Information

    Category: Materials

    Received: Dec. 12, 2017

    Accepted: --

    Published Online: Sep. 11, 2018

    The Author Email: Xuan Fang ( fangxuan110@126.com)

    DOI:10.3788/LOP55.051603

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