Laser & Optoelectronics Progress, Volume. 55, Issue 5, 051603(2018)
Effect of Rapid Thermal Annealing on Structural and Luminescence Properties of GaAs/AlGaAs Quantum Wells
Fig. 2. (a) XRD patterns of different samples; (b) FWHM and +1 diffraction peak intensity of samples under different annealing temperatures
Fig. 3. PL scanning test results of different samples. (a) Luminous intensity; (b) FWHM
Fig. 4. PL spectrum comparison between untreated sample and RTA treated samples at room temperature
Fig. 5. (a) Normalized peak-differentiating and fitting diagram of untreated sample and RTA treated samples; (b) band splitting graph
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Min Zhi, Xuan Fang, Shouzhu Niu, Dan Fang, Jilong Tang, Dengkui Wang, Xinwei Wang, Xiaohua Wang, Zhipeng Wei. Effect of Rapid Thermal Annealing on Structural and Luminescence Properties of GaAs/AlGaAs Quantum Wells[J]. Laser & Optoelectronics Progress, 2018, 55(5): 051603
Category: Materials
Received: Dec. 12, 2017
Accepted: --
Published Online: Sep. 11, 2018
The Author Email: Xuan Fang ( fangxuan110@126.com)