Chinese Journal of Lasers, Volume. 47, Issue 7, 701018(2020)
Influence of Optical Field Distribution on GaN-Based Green Laser Diodes
Figures & Tables(6)
Fig. 1. Schematic structure of GaN-based green laser diodes (LDs) obtained by theoretical calculation with LASTIP
Fig. 2. Optical characteristics of LD1--LD10 when the injection current is 120 mA. (a) Optical field distribution and grey part marks the region of GaN substrate in LDs; (b) optical confinement factor; (c) optical loss
Fig. 3. Threshold current of LD1--LD10 and output optical power when injection current is 120 mA. (a) Threshold current; (b) output optical power
Fig. 4. Optical characteristics of LD11--LD20 when injection current is 120 mA. (a) Normalized optical field distributions and grey part marks the region of GaN substrate in LDs; (b) optical confinement factor; (c) optical loss
Fig. 5. Threshold current of LD11--LD20 and output optical power when injection current is 120 mA. (a) Threshold current; (b) output optical power
Table 1. Structural parameters of GaN-based green LDs calculated by LASTIP
View tableTable 1. Structural parameters of GaN-based green LDs calculated by LASTIP
Layer Thickness Doping level /cm-3 n-GaN substrate 1 μm 3×1018 n-Al0.08Ga0.92N (nCL) 0.4--2.5 μm 3×1018 n-In0.05Ga0.95N (LWG) 120 nm 5×1017 2×In0.37Ga0.63N/GaN (DQW) 2.5 nm/ 17 nm 5×1016 u-In0.02Ga0.98N UWG: LD1--LD10 u-In0.05Ga0.95N UWG: LD11--LD20 100 nm 5×1016 p-Al0.2Ga0.8N (EBL) 20 nm 1×1019 p-Al0.08Ga0.92N (pCL) 450 nm 1×1019 p-GaN 150 nm 1×1019 p++-GaN 40 nm 1×1020
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Liang Feng, Zhao Degang, Jiang Desheng, Liu Zongshun, Zhu Jianjun, Chen Ping, Yang Jing. Influence of Optical Field Distribution on GaN-Based Green Laser Diodes[J]. Chinese Journal of Lasers, 2020, 47(7): 701018
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Received: Feb. 25, 2020
Accepted: --
Published Online: Jul. 10, 2020
The Author Email: Degang Zhao (dgzhao@red.semi.ac.cn)
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