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Frontiers of Optoelectronics, Volume. 5, Issue 1, 112(2012)

MBE growth of tensile-strained Ge quantum wells and quantum dots

Yijie HUO1、*, Hai LIN2, Robert CHEN1, Yiwen RONG1, Theodore I. KAMINS1, and James S. HARRIS1
Author Affiliations
  • 1Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
  • 2Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA
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    Yijie HUO, Hai LIN, Robert CHEN, Yiwen RONG, Theodore I. KAMINS, James S. HARRIS. MBE growth of tensile-strained Ge quantum wells and quantum dots[J]. Frontiers of Optoelectronics, 2012, 5(1): 112

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    Paper Information

    Received: Sep. 16, 2011

    Accepted: Nov. 7, 2011

    Published Online: Sep. 10, 2012

    The Author Email: Yijie HUO (yijiehuo@gmail.com)

    DOI:10.1007/s12200-012-0193-x

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology