Chinese Optics Letters, Volume. 1, Issue 9, 09553(2003)

Photon-activated charge domain in high-gain photoconductive switches

Wei Shi1、*, Huiying Dai1, and Xiaowei Sun2
Author Affiliations
  • 1Xi'an University of Technology, Xi'an 710048
  • 2Nanyang Technological University, Nanyang Avenue, Singapore 639798
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    References(10)

    [1] [1] M. S. Sze, Physics of Semiconductor Devices (2nd edition) (John Wiley & Sons, Singapore, 1981), p. 44, 637.

    [2] [2] C. H. Lee, IEEE Trans. on Electron Device 37, 2426 (1990).

    [3] [3] A. Rosen and F. Zutavern, in High-Power Optically Activated Solid-State Switches (Artech House, Norwood, 1994) Chap. 11.

    [4] [4] G. M. Loubriel and F. J. Zutavern, IEEE Trans. on Plasma Science 25, 124 (1997).

    [5] [5] T. C. H. Lee, in Picosecond Optoelectronic Devices (Academic Press, Orlando, 1984), Chap. 11.

    [6] [6] W. Shi, E. Z. Chen, X. B. Zhang, and Q. Li, Chin. Phys. Lett. 19, 1119 (2002).

    [7] [7] W. Shi, W. Zhao, Z. X. Liang, and X. W. Sun, Chin. Phys. Lett. 18, 1479 (2001).

    [8] [8] W. Shi, X. B. Zhang, Q. Li, E. Z. Chen, and W. Zhao, Chin. Phys. Lett. 19, 351 (2002).

    [9] [9] B. G. Bosch and R. W. H. Engelmann, Gunn-Effect Electronics (Pitman, Bath, 1975) p. 23.

    [10] [10] J. Singh, Semiconductor Optoelectronics: Physics and Technology (McGraw Hill, Singapore, 1995) p. 205, 265.

    CLP Journals

    [1] Hong Liu, Jingli Wang, Lin Zhang, Binjie Xin, Xinmei Wang, Wei Shi, "Research on electrical pulse of 20-kV/30-Hz GaAs photoconductive switches," Chin. Opt. Lett. 9, 063202 (2011)

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    Wei Shi, Huiying Dai, Xiaowei Sun, "Photon-activated charge domain in high-gain photoconductive switches," Chin. Opt. Lett. 1, 09553 (2003)

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    Paper Information

    Category: Ultrafast Optics

    Received: Jun. 19, 2003

    Accepted: --

    Published Online: Jun. 6, 2006

    The Author Email: Wei Shi (swshi@mail.xaut.edu.cn)

    DOI:

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