Fig. 1. Schematic diagram of 3D simulation structure. (a) Periodic array of hexagonal gold nanowire; (b) schematic diagram of a single cycle interface

Fig. 2. Electric field intensity diagrams at the peak of absorption curve for devices with different GaAs thicknesses. (a) GaAs thickness is 10 nm; (b) GaAs thickness is 30 nm; (c) GaAs thickness is 50 nm

Fig. 3. Absorptivity curves of device under different thicknesses of ITO. (a) GaAs thickness of 10 nm; (b) GaAs thickness of 50 nm

Fig. 4. Variation in absorptivity of device with diameters of gold nanowire

Fig. 5. Variation in device absorptivity under different incidence angles in TE polarization state

Fig. 6. Variation in responsivity and photocurrent with bias voltage