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Microelectronics, Volume. 51, Issue 1, 96(2021)

A Novel Silicon Carbide DSRD with Variable Doping in Base Region

QIAO Bin, CHEN Wanjun, GAO Wuhao, XIA Yun, ZHANG Kenan, and SUN Ruize
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    QIAO Bin, CHEN Wanjun, GAO Wuhao, XIA Yun, ZHANG Kenan, SUN Ruize. A Novel Silicon Carbide DSRD with Variable Doping in Base Region[J]. Microelectronics, 2021, 51(1): 96

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    Received: Jan. 18, 2020

    Accepted: --

    Published Online: Mar. 11, 2022

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.200043

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology