Journal of Infrared and Millimeter Waves, Volume. 42, Issue 4, 483(2023)

High-efficiency AlN/GaN MIS-HEMTs with SiNx insulator grown in-situ for millimeter wave applications

Xiao-Juan CHEN1,2、*, Yi-Chuan ZHANG2, Shen ZHANG2, Yan-Kui LI2, Jie-Bin NIU2, Sen HUANG2, Xiao-Hua MA1, Jin-Cheng ZHANG1, and Ke WEI2、**
Author Affiliations
  • 1Xidian University,Xi'an 710071,China
  • 2Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
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    References(16)

    [5] Medjdoub F, Okada E, Grimbert B et al. Towards millimeter-wave high PAE high power using ultrathin Al-rich barrier GaN devices(2015).

    [6] Zimmermann, T et al. AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance[J]. IEEE Electron Device Letters29, 7, 661-664.

    [7] Koehler A. D, Nepal N et al. Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation[J]. Electron Device Letters, 34, 1115-1117(2013).

    [9] Taking S, Khokhar A, Macfarlane D et al. New Process for Low Sheet and Ohmic Contact Resistance of AlN/GaN MOS-HEMTs[J]. European Microwave Week 2010: Connecting the World, EuMIC 2010 - Conference Proceedings (2010), 306-309(2010).

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    Xiao-Juan CHEN, Yi-Chuan ZHANG, Shen ZHANG, Yan-Kui LI, Jie-Bin NIU, Sen HUANG, Xiao-Hua MA, Jin-Cheng ZHANG, Ke WEI. High-efficiency AlN/GaN MIS-HEMTs with SiNx insulator grown in-situ for millimeter wave applications[J]. Journal of Infrared and Millimeter Waves, 2023, 42(4): 483

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    Paper Information

    Category: Research Articles

    Received: Jun. 22, 2022

    Accepted: --

    Published Online: Aug. 1, 2023

    The Author Email: Xiao-Juan CHEN (chenxiaojuan@ime.ac.cn), Ke WEI (weike@ime.ac.cn)

    DOI:10.11972/j.issn.1001-9014.2023.04.009

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