Highly efficient transparent quantum-dot light-emitting diodes based on inorganic double electron-transport layers

Nan Zhang; Xiangwei Qu; Quan Lyu; Kai Wang; Xiao Wei Sun

doi:10.1364/PRJ.424750

Photonics Research, Volume. 9, Issue 10, 1979(2021)

Highly efficient transparent quantum-dot light-emitting diodes based on inorganic double electron-transport layers

Nan Zhang¹, Xiangwei Qu^2,3, Quan Lyu⁴, Kai Wang^2,3,5、*, and Xiao Wei Sun^2,3,6、*

Author Affiliations

¹Peng Cheng Laboratory, Shenzhen 518055, China

²Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China

³Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen 518055, China

⁴Huawei Technologies Research & Development (UK) Ltd., Ipswich IP5 3RE, UK

⁵e-mail: wangk@sustech.edu.cn

⁶e-mail: sunxw@sustech.edu.cn

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Figures & Tables(6)

Fig. 1. (a) Structural design and (b) the corresponding energy level diagram of the Tr-QLEDs fabricated in this study [22]. Performance of the fabricated Tr-QLED device: (c) luminance–voltage (L–V) characteristics, (d) current density–voltage (J–V) characteristics, and (e) current efficiency and (f) EQE as functions of current density.

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Fig. 2. (a) Current density–voltage (J–V) curves of the electron-only device with and without ZnMgO. Energy-level diagram of the materials and the corresponding working mechanisms of the electron-only devices (b) without and (c) with ZnMgO. (d)–(g) EL spectra of the fabricated Tr-QLEDs device with and without ZnMgO driven by different voltages.

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Fig. 3. Bottom, top, and total emission characteristics of Tr-QLEDs without and with a ZnMgO layer: (a) and (b) luminance-voltage (L-V), (c) and (d) current efficiency, (e) and (f) EQE as a function of current density.

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Fig. 4. (a) EL spectra, (b) CIE chromaticity diagram, and (c) transmittance spectra of the fabricated Tr-QLEDs with double ETLs. The inset of (c) shows images of the device at turn-off and turn-on states. (d) Photograph of the Tr-QLED in the front of a mirror.

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Table 1. EL Characteristics of Tr-QLEDs with Different ETLs
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Table 1. EL Characteristics of Tr-QLEDs with Different ETLs
Device ETL Peak EQE (%) Peak CE^a(cd/A) Luminance ( $cd / m^{2}$ )
1 ZnO 9.3 12.6 34,461
2 ZnO/ZnMgO 11.8 16.0 33,764

Table 2. Comparison of the Characteristics and Performances of Reported Tr-QLEDs

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Table 2. Comparison of the Characteristics and Performances of Reported Tr-QLEDs

Device	Maximum EQE (%)	Peak CE^a (cd/A)	T^b(%)	Luminance ( $cd / m^{2}$ )
Ref. [8]	–	1.79	55	10,540
Ref. [9]	–	0.45	75	358
Ref. [10]	–	0.47	74	200
Ref. [12]	–	15.33	75.66^c	18,407
Ref. [14]	–	10.8	73	48,480
Ref. [16]	10.63	44.23	80	42,610
Our work	11.8	16	82	33,764

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Nan Zhang, Xiangwei Qu, Quan Lyu, Kai Wang, Xiao Wei Sun, "Highly efficient transparent quantum-dot light-emitting diodes based on inorganic double electron-transport layers," Photonics Res. 9, 1979 (2021)

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