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Photonics Research, Volume. 1, Issue 3, 140(2013)

High-performance waveguide-integrated germanium PIN photodiodes for optical communication applications [Invited]

Leopold Virot1,2,3,4, Laurent Vivien1, Jean-Marc Fedeli2, Yann Bogumilowicz2, Jean-Michel Hartmann2, Frederic Boeuf5, Paul Crozat1, Delphine Marris-Morini1, and and Eric Cassan1
Author Affiliations
  • 1Institut d’Electronique Fondamentale (IEF), Univ. Paris-Sud, CNRS, Bat 220, F-91405 Orsay, France
  • 2CEA, LETI, Minatec Campus, 17 rue des Martyrs, F-38054 Grenoble, France
  • 3leopold.virot@cea.fr
  • 4laurent.vivien@u-psud.fr
  • 5STMicroelectronics, Silicon Technology Development, Crolles, France
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    [1] S. Fama, L. Colace, G. Masini, G. Assanto, H.-C. Luan. High performance germanium-on-silicon detectors for optical communications. Appl. Phys. Lett., 81, 586-588(2002).

    [2] M. Jutzi, M. Berroth, G. Wohl. Ge-on-Si vertical incidence photodiodes with 39 GHz bandwidth. IEEE Photon. Technol. Lett., 17, 1510-1512(2005).

    [3] M. Oehme, J. Werner, E. Kasper, M. Jutzi, M. Berroth. High bandwidth Ge p-i-n photodetector integrated on Si. Appl. Phys. Lett., 89, 071117(2006).

    [4] D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, F. X. Kärtner. High performance, waveguide integrated Ge photodetectors. Opt. Express, 15, 3916-3921(2007).

    [5] T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, M. J. Paniccia. 31  GHz Ge n-i-p waveguide photodetectors on silicon-on-insulator substrate. Opt. Express, 15, 13965(2007).

    [6] L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J. F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, S. Laval. High speed and high responsivity germanium photodetector integrated in a silicon-on-insulator microwaveguide. Opt. Express, 15, 9843-9848(2007).

    [7] L. Chen, P. Dong, M. Lipson. High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding. Opt. Express, 16, 11513-11518(2008).

    [8] K. Ang, S. Zhu, M. Yu. High-performance waveguided Ge-on-SOI metal–semiconductor–metal photodetectors with novel silicon–carbon (Si:C) Schottky barrier enhancement layer. IEEE Photon. Technol. Lett., 20, 754-756(2008).

    [9] J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, S. M. F. Tan, M. B. Yu, S. J. Lee, G. Q. Lo, D. L. Kwong. Low-voltage high-speed (18 GHz/1 V) evanescent-coupled thin-film-Ge lateral PIN photodetectors integrated on Si waveguide. IEEE Photonics Technol. Lett., 20, 1485-1487(2008).

    [10] D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. Cunningham, A. V. Krishnamoorthy, M. Asghari. High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide. Appl. Phys. Lett., 95, 261105(2009).

    [11] S. Klinger, M. Berroth, M. Kaschel, M. Oehme, E. Kasper. Ge-on-Si p-i-n photodiodes with a 3  dB bandwidth of 49  GHz. IEEE Photon. Technol. Lett., 21, 920-922(2009).

    [12] L. Vivien, J. Osmond, J.-M. Fédéli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, S. Laval. 42  GHz p.i.n germanium photodetector integrated in a silicon-on-insulator waveguide. Opt. Express, 17, 6252-6257(2009).

    [13] S. Assefa, F. Xia, Y. A. Vlasov. Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects. Nature, 464, 80-84(2010).

    [14] C. T. DeRose, D. C. Trotter, W. A. Zortman, A. L. Starbuck, M. Fisher, M. R. Watts, P. S. Davids. Ultra compact 45  GHz CMOS compatible germanium waveguide photodiode with low dark current. Opt. Express, 19, 24897-24904(2011).

    [15] L. Vivien, A. Polzer, D. Marris-Morini, J. Osmond, J. M. Hartmann, P. Crozat, E. Cassan, C. Kopp, H. Zimmermann, J. M. Fédéli. Zero-bias 40  Gbit/s germanium waveguide photodetector on silicon. Opt. Express, 20, 1096-1101(2012).

    [16] A. Liu, R. Jones, L. Liao, D. Samara-rubio. A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor. Nature, 427, 615-618(2004).

    [17] L. Liao, D. Samara-Rubio, M. Morse, A. Liu, D. Hodge, D. Rubin, U. Keil, T. Franck. High speed silicon Mach-Zehnder modulator. Opt. Express, 13, 3129-3135(2005).

    [18] J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, J. Michel. Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators. Nat. Photonics, 2, 433-437(2008).

    [19] D. Marris-Morini, L. Vivien, J. M. Fédéli, E. Cassan, P. Lyan, S. Laval. Low loss and high speed silicon optical modulator based on a lateral carrier depletion structure. Opt. Express, 16, 334-339(2008).

    [20] M. Ziebell, D. Marris-Morini, G. Rasigade, J.-M. Fédéli, P. Crozat, E. Cassan, D. Bouville, L. Vivien. 40  Gbit/s low-loss silicon optical modulator based on a pipin diode. Opt. Express, 20, 10591-10596(2012).

    [21] X. Xiao, H. Xu, X. Li, Z. Li, T. Chu, Y. Yu, J. Yu. High-speed, low-loss silicon Mach–Zehnder modulators with doping optimization. Opt. Express, 21, 4116-4125(2013).

    [22] A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, J. E. Bowers. Electrically pumped hybrid AlGaInAs-silicon evanescent laser. Opt. Express, 14, 9203-9210(2006).

    [23] G. Roelkens, D. Van Thourhout, R. Baets, R. Nötzel, M. Smit. Laser emission and photodetection in an InP/InGaAsP layer integrated on and coupled to a silicon-on-insulator waveguide circuit. Opt. Express, 14, 8154-8159(2006).

    [24] B. Ben Bakir, a. Descos, N. Olivier, D. Bordel, P. Grosse, E. Augendre, L. Fulbert, J. M. Fedeli. Electrically driven hybrid Si/III–V Fabry-Pérot lasers based on adiabatic mode transformers. Opt. Express, 19, 10317-10325(2011).

    [25] S. Stankovi, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, D. Van Thourhout, A. Abstract, V. Iii. Hybrid III–V/Si distributed-feedback laser. IEEE Photon. Technol. Lett., 24, 2155-2158(2012).

    [26] J. K. Doylend, M. J. R. Heck, J. T. Bovington, J. D. Peters, M. L. Davenport, L. A. Coldren, J. E. Bowers. Hybrid III/V silicon photonic source with integrated 1D free-space beam steering. Opt. Lett., 37, 4257-4259(2012).

    [27] J. Liu, X. Sun, R. Camacho-Aguilera, L. C. Kimerling, J. Michel. Ge-on-Si laser operating at room temperature. Opt. Lett., 35, 679-681(2010).

    [28] R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, J. Michel. An electrically pumped germanium laser. Opt. Express, 20, 11316-11320(2012).

    [29] T. A. Langdo, C. W. Leitz, M. T. Currie, E. A. Fitzgerald, A. Lochtefeld, D. A. Antoniadis. High quality Ge on Si by epitaxial necking. Appl. Phys. Lett., 76, 3700-3702(2000).

    [30] J. M. Hartmann, A. M. Papon, P. Holliger, G. Rolland, T. Billon, M. Rouvière, L. Vivien, S. Laval. Reduced pressure—chemical vapor deposition of Ge thick layers on Si (001) for microelectronics and optoelectronics purposes. MRS Proc., 809, B4.3.

    [31] Y. Liu, M. D. Deal, J. D. Plummer. High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates. Appl. Phys. Lett., 84, 2563-2565(2004).

    [32] J. M. Hartmann, J.-F. Damlencourt, Y. Bogumilowicz, P. Holliger, G. Rolland, T. Billon. Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(001) for microelectronics and optoelectronics purposes. J. Cryst. Growth, 274, 90-99(2005).

    [33] D. Choi, Y. Ge, J. S. Harris, J. Cagnon, S. Stemmer. Low surface roughness and threading dislocation density Ge growth on Si (001). J. Cryst. Growth, 310, 4273-4279(2008).

    [34] K. Toko, T. Tanaka, Y. Ohta, T. Sadoh, M. Miyao. Defect-free Ge-on-insulator with (100), (110), and (111) orientations by growth-direction-selected rapid-melting growth. Appl. Phys. Lett., 97, 152101(2010).

    [35] K. Toko, Y. Ohta, T. Sakane, T. Sadoh, I. Mizushima, M. Miyao. Single-crystalline (100) Ge networks on insulators by rapid-melting growth along hexagonal mesh-pattern. Appl. Phys. Lett., 98, 042101(2011).

    [36] Y. H. Tan, C. S. Tan. Growth and characterization of germanium epitaxial film on silicon (001) using reduced pressure chemical vapor deposition. Thin Solid Films, 520, 2711-2716(2012).

    [37] G. Lucovsky, R. F. Schwarz, R. B. Emmons. Transit-time considerations in p–i–n diodes. J. Appl. Phys., 35, 622-628(1964).

    [38] S. Kobayashi, Y. Nishi, K. C. Saraswat. Effect of isochronal hydrogen annealing on surface roughness and threading dislocation density of epitaxial Ge films grown on Si. Thin Solid Films, 518, S136-S139(2010).

    [39] C. O. Chui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, K. C. Saraswat. Activation and diffusion studies of ion-implanted p and n dopants in germanium. Appl. Phys. Lett., 83, 3275-3277(2003).

    [40] M. Koike, Y. Kamata, T. Ino, D. Hagishima, K. Tatsumura, M. Koyama, A. Nishiyama. Diffusion and activation of n-type dopants in germanium. J. Appl. Phys., 104, 023523(2008).

    [41] H. Bracht, S. Schneider, R. Kube. Diffusion and doping issues in germanium. Microelectron. Eng., 88, 452-457(2011).

    [42] S. Koffel, R. J. Kaiser, A. J. Bauer, B. Amon, P. Pichler, J. Lorenz, L. Frey, P. Scheiblin, V. Mazzocchi, J.-P. Barnes, A. Claverie. Experiments and simulation of the diffusion and activation of the n-type dopants P, As, and Sb implanted into germanium. Microelectron. Eng., 88, 458-461(2011).

    [43] W. T. Tsang. Semiconductors and Semimetals, 22, 1-451(1985).

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    Leopold Virot, Laurent Vivien, Jean-Marc Fedeli, Yann Bogumilowicz, Jean-Michel Hartmann, Frederic Boeuf, Paul Crozat, Delphine Marris-Morini, and Eric Cassan, "High-performance waveguide-integrated germanium PIN photodiodes for optical communication applications [Invited]," Photonics Res. 1, 140 (2013)

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    Paper Information

    Category: Integrated Optics

    Received: Jun. 29, 2013

    Accepted: Aug. 29, 2013

    Published Online: Nov. 8, 2013

    The Author Email:

    DOI:10.1364/PRJ.1.000140

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology