Chinese Optics Letters, Volume. 22, Issue 7, 071601(2024)

Gd3Al3Ga2O12:Ce3+, Yb3+ fluorescent ceramic with highly increased trap density for optical information storage

Jiaocheng Yin1,2, Renjie Jiang2, Junwei Zhang2, Qiao Hu2, Miao Zhao2, Xiaoxia Wang1、***, Anlian Pan1、**, and Hao Ruan2、*
Author Affiliations
  • 1College of Materials Science and Engineering, Hunan University, Changsha 410082, China
  • 2Photonic Integrated Circuits Center, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
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    Figures & Tables(12)
    Preparation flowchart of fluorescent ceramics.
    (a) XRD patterns of SA0, SA25, SA30, SA40, SA35V, and GAGG (PDF#46-0048); (b) Rietveld refinement of the SA35V; inset is the unit cell structure of Gd3Al3Ga2O12 showing coordination environment of Gd, Al, and Ga.
    SEM micrograph and elemental mapping pictures of SA35V.
    PLE and PL spectra of SA0, SA25, SA30, SA35, SA40, and SA35V.
    (a) TL curves of SA25, SA30, SA35, SA40; (b) comparison of TL curves and relative trap densities of SA0, SA35, and SA35V.
    TL curves with different heating rates of SA35V, and the trap depths.
    XPS spectra of the O 1s in SA0, SA35, and SA35V.
    (a) TL curves of SA0 and SA35V before and after air annealing; (b) EPR spectra of SA0 and SA35V after air annealing and SA35.
    Schematic of the optical storage mechanism of the GAGG:Ce3+, Yb3+.
    (a) Schematic illustration of the information storage and readout in ceramics; (b) and (c) the sample, with written information, is stimulated by 650 nm light and continuously stimulated for 1 min (with a filter); (d) and (e) the sample with written information is heated to 300°C and held at 300°C for 1 min.
    • Table 1. Rietveld Refined Occupancy and Coordinates (x, y, z) in the Gd3Al3Ga2O12

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      Table 1. Rietveld Refined Occupancy and Coordinates (x, y, z) in the Gd3Al3Ga2O12

      AtomSitexyzOccupancy
      Gd24c0.12500.251
      Ga116a0000.350(7)
      Al116a0000.650(7)
      Ga224d0.37500.250.607(11)
      Al224d0.37500.250.393(11)
      O96h0.104(27)0.199(24)0.290(20)1
    • Table 2. ETMs and their trap depths (E, trap depth)

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      Table 2. ETMs and their trap depths (E, trap depth)

      Host MaterialsDopantsE (eV)Ref.
      Y3Al2Ga3O12Pr3+, Eu3+1.42[19]
      Y2GeO5Pr3+, Tb3+0.69, 0.93, 1.21[7]
      LiYF4Dy3+0.40, 1.05, 1.07, 1.20[20]
      Ba1.6Ca0.4SiO4Eu2+, Dy3+0.3–0.7[21]
      SrAl2O4Eu2+, Dy3+0.77–1[9]
      LiLuSiO4Ce3+, Tm3+1.3[22]
      Lu3Al5O12Ce3+1.4 ± 0.1[23]
      LaSrAl3O7Eu2+0.72–0.91[24]
      CaSi10Al2N16Eu2+0.65–1.5[25]
      Y3Ga5O12Cr3+, Si4+0.67, 0.76, 0.92, 1.26[26]
      NaMgF3Tb3+0.57, 0.83[27]
      Lu2O3Tb3+, Zr4+/Ti4+1.40–1.44, 1.79[28]
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    Jiaocheng Yin, Renjie Jiang, Junwei Zhang, Qiao Hu, Miao Zhao, Xiaoxia Wang, Anlian Pan, Hao Ruan, "Gd3Al3Ga2O12:Ce3+, Yb3+ fluorescent ceramic with highly increased trap density for optical information storage," Chin. Opt. Lett. 22, 071601 (2024)

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    Paper Information

    Category: Optical Materials

    Received: Dec. 8, 2023

    Accepted: Mar. 4, 2024

    Published Online: Jul. 11, 2024

    The Author Email: Xiaoxia Wang (wangxiaoxia@hnu.edu.cn), Anlian Pan (Anlian.Pan@hnu.edu.cn), Hao Ruan (ruanhao@siom.ac.cn)

    DOI:10.3788/COL202422.071601

    CSTR:32184.14.COL202422.071601

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