[1] Zhang K. Abroad development status of CCD image sensors usedin secondary planet[J]. Journal of China Academy of Electronics and Information Technology, 2, 324-328(2007).

[2] Wang Z J, Huang S Y, Liu M B et al. Analysis of the displacement damage mechanism of radiation effects in CCD[J]. Semiconductor Optoelectronics, 31, 175-179(2010).

[3] Wang Z J, Tang B Q, Xiao Z G et al. The analysis of mechanism on ionization radiation damage effects on CCD[J]. Nuclear Electronics & Detection Technology, 29, 565-570, 619(2009).

[4] Hopkinson G R, Dale C J, Marshall P W. Proton effects in charge-coupled devices[J]. IEEE Transactions on Nuclear Science, 43, 614-627(1996).

[5] Janesick J, Elliott T, Pool F. Radiation damage in scientific charge-coupled devices[J]. IEEE Transactions on Nuclear Science, 36, 572-578(1989).

[6] Wang Z J. Research on proton radiation effects on charge coupled device with experiment and simulation methods[D](2011).

[7] Hopkinson G R, Mohammadzadeh A. Comparison of CCD damage due to 10- and 60-MeV protons[J]. IEEE Transactions on Nuclear Science, 50, 1960-1967(2003).

[8] Hopkinson G R. Proton-induced changes in CTE for n-channel CCDs and the effect on star tracker performance[J]. IEEE Transactions on Nuclear Science, 47, 2460-2465(2000).

[9] Hopkinson G R. Radiation-induced dark current increases in CCDs[C], 401-408(2002).

[10] Hopkinson G R. Cobalt60 and proton radiation effects on large format, 2-D, CCD arrays for an Earth imaging application[J]. IEEE Transactions on Nuclear Science, 39, 2018-2025(1992).

[11] Germanicus R, Barde S, Dusseau L et al. Evaluation and prediction of the degradation of a COTS CCD induced by displacement damage[J]. IEEE Transactions on Nuclear Science, 49, 2830-2835(2002).

[12] Wang Z J, Tang B Q, Xiao Z G et al. Experimental analysis of charge transfer efficiency degradation of charge coupled devices induced by proton irradiation[J]. Acta Physica Sinica, 59, 4136-4142(2010).

[13] Wang Z J, Zhang Y, Tang B Q et al. Analysis of experiments on total dose radiation effects on TCD132D linear CCD[J]. Chinese Journal of Electron Devices, 33, 18-21(2010).

[14] Wang Z J, Xue Y Y, Wang D et al. Charge coupled device irradiated by 200 MeV protons at Xi’an 200 MeV proton application facility[J]. Modern Applied Physics, 12, 020604(2021).

[15] Wang Z J, Xue Y Y, Xu R et al. Charge transfer inefficiency increase of the CCD detector induced by proton and neutron irradiations[J]. Nuclear Instruments and Methods in Physics Research Section A, 978, 164431(2020).

[16] Wang Z J, Xue Y Y, Zhang F Q et al. Radiation damage evaluation of the CCD detector induced by high energy protons[J]. Nuclear Instruments and Methods in Physics Research Section A, 924, 219-224(2019).

[17] Yu Q K, Tang M, Zhu H J et al. Experimental investigation on radiation damage on CCD by 10 MeV proton and cobalt 60 gamma[J]. Spacecraft Environment Engineering, 25, 391-394, 300(2008).

[18] Wen L, Li Y D, Guo Q et al. Mechanism of spectrum response degradation in CCD’s exposed to γ-ray and proton[J]. Chinese Journal of Luminescence, 39, 244-250(2018).

[19] Sun M D, Dong Q L, Zhao W X et al. Design of array CCD driving circuit based on CPLD[J]. Modern Electronics Technique, 37, 142-145(2014).

[20] Beecken B P, Fossum E R. Determination of the conversion gain and the accuracy of its measurement for detector elements and arrays[J]. Applied Optics, 35, 3471-3477(1996).

[21] Feng J, Li Y D, Wen L et al. Degradation mechanism for photon transfer curve of CMOS image sensor after irradiation[J]. Optics and Precision Engineering, 25, 2676-2681(2017).

[22] Wang Z J, Xue Y Y, Guo X Q et al. Measurement and analysis of the conversion gain degradation of the CIS detectors in harsh radiation environments[J]. Nuclear Instruments and Methods in Physics Research Section A, 895, 35-39(2018).

[23] Xue Y Y, Wang Z J, Liu J et al. Numerical calculation and analysis of proton radiation effects on CCD based on Monte Carlo method[J]. High Power Laser and Particle Beams, 30, 044001(2018).

[24] Jun I, Xapsos M A, Messenger S R et al. Proton nonionizing energy loss (NIEL) for device applications[J]. IEEE Transactions on Nuclear Science, 50, 1924-1928(2003).

[26] Schwank J R, Shaneyfelt M R, Fleetwood D M et al. Radiation effects in MOS oxides[J]. IEEE Transactions on Nuclear Science, 55, 1833-1853(2008).

[27] Zou Y S, Liu Y F, Bai T Z[M]. Photoelectricity imaging theory, 357(1997).

[28] Wang Z J, Xue Y Y, Liu W L et al. H- beams irradiation effect of CMOS image sensor at Xi’an 200 MeV proton application facility[J]. Modern Applied Physics, 12, 030604(2021).

[29] Liu W S[M]. Energy technology glossary, 391(1989).

[30] Hardy T D, Deen M J, Murowinski R. Effects of radiation damage on scientific charge coupled devices[J]. Advances in Imaging and Electron Physics, 106, 1-96(1999).