Spectroscopy and Spectral Analysis, Volume. 45, Issue 6, 1584(2025)

Temperature Dependence of InGaAs/GaAs Quantum Well Growth Characterized by XRD and PL Spectral Analysis

LI Bo1,2, MA Shu-fang1,3、*, YANG Zhi1,2, CHENG Rui-si1,2, LIU Si-min1,2, WANG Jia-hui1,2, HAO Xiao-dong1,3, SHANG Lin1,3, QIU Bo-cang1,3, DONG Hai-liang4, HAN Dan4, and XU Bing-she1,4
Author Affiliations
  • 1Xi'an Key Laboratory of Compound Semiconductor Materials and Devices, Shaanxi University of Science and Technology, Xi'an 710021, China
  • 2School of Materials Science and Engineering, Shaanxi University of Science and Technology, Xi'an 710021, China
  • 3School of Physical and Information Science, Shaanxi University of Science and Technology, Xi'an 710021, China
  • 4Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China
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    LI Bo, MA Shu-fang, YANG Zhi, CHENG Rui-si, LIU Si-min, WANG Jia-hui, HAO Xiao-dong, SHANG Lin, QIU Bo-cang, DONG Hai-liang, HAN Dan, XU Bing-she. Temperature Dependence of InGaAs/GaAs Quantum Well Growth Characterized by XRD and PL Spectral Analysis[J]. Spectroscopy and Spectral Analysis, 2025, 45(6): 1584

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    Paper Information

    Received: Sep. 10, 2024

    Accepted: Jun. 27, 2025

    Published Online: Jun. 27, 2025

    The Author Email: MA Shu-fang (mashufang@sust.edu.cn)

    DOI:10.3964/j.issn.1000-0593(2025)06-1584-08

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