[1] [1] STUART B C, FEIT M D, HERMAN S, et al． Nanosecond-to-femtosecond laser-induced breakdown in dielectrics [J]． Phys. Rev., B , 1996, 53(4): 749-1761．

[4] [4] AMIT PRATAP SINGH, AVINZ SHI KAPOOR, TRIPATHI K N, et al． Laser damage studies of silicon surfaces using ultra-short laser pulses [J]． Optic &technology, 2002, 34(1): 37-43．

[7] [7] JELLISON G E, LOWNDES D H． Optical absorption coefficient of silicon at elevated temperatures[J]． Appl. Phys. Lett., 1982, 41( 7): 594-596．

[8] [8] JELLISON G E, MODLINE F A． Optical absorption of silicon between 1.6 and 4.7eV at elevated temperatures[J]．Appl.Phys. Lett., 1982, 41(2): 180-182．

[9] [9] JELLISON G E, LOWNDES D H. Measurement of the optical properties of liquid silicon and germanium using nanosecond time-resolved ellipsometry[J]． Appl. Phys. Lett., 1987, 51(5): 352．