Journal of Semiconductors, Volume. 40, Issue 12, 122404(2019)

Column readout circuit with improved offset mismatch and charge sharing for CMOS image sensor

Zhongjie Guo1... Ningmei Yu1 and Longsheng Wu2 |Show fewer author(s)
Author Affiliations
  • 1School of Automation and Information Engineering, Xi’an University of Technology, Xi’an 710048, China
  • 2Xi’an Microelectronic Technology Institute, Xi’an 710054, China
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    Figures & Tables(10)
    Column readout with two buffers.
    Column readout with single buffer.
    (a) Proposed column readout. (b) Control timing of the proposed circuit.
    (a) Reset level sample phase. (b) Image level sample phase. (c) Reset level buffer phase. (d) Image level buffer phase.
    n columns readout schematic.
    Control timing of n columns readout.
    (Color online) Die micrograph.
    Output code and nonuniformity versus exposure time.
    Comparison of actual images before and after optimization. (a) Image with traditional technique. (b) Image with proposed technique.
    • Table 1. Performance summary and comparison with the state of the art.

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      Table 1. Performance summary and comparison with the state of the art.

      ParameterThis workRef. [7] Ref. [10]
      Process55 nm CMOS40 nm CMOS180 nm CMOS
      Pixel size (μm) 5.45.42.8
      Supply (V)3.3/1.22.5/2/1.13.3/1.8
      Horizontal time (μs) 56.021.92
      Column FPN (%)0.00750.0280.31
      Read noise (μVrms) 190261.5320
      Dynamic range (intrinsic) (dB)7571.862.9
      Photo response nonuniformity1.16%N/AN/A
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    Zhongjie Guo, Ningmei Yu, Longsheng Wu. Column readout circuit with improved offset mismatch and charge sharing for CMOS image sensor[J]. Journal of Semiconductors, 2019, 40(12): 122404

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    Paper Information

    Category: Articles

    Received: Dec. 18, 2018

    Accepted: --

    Published Online: Sep. 22, 2021

    The Author Email:

    DOI:10.1088/1674-4926/40/12/122404

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