[1] Wang L N, Jia Y S, Liu J L. Photoconductive semiconductor switch-based triggering with 1 ns jitter for trigatron[J]. Matter and Radiation at Extremes, 3, 256-260(2018).

[2] Sullivan J S, Stanley J R. Wide bandgap extrinsic photoconductive switches[J]. IEEE Transactions on Plasma Science, 36, 2528-2532(2008).

[3] Kidera S, Sakamoto T, Sato T. Accurate UWB radar three-dimensional imaging algorithm for a complex boundary without range point connections[J]. IEEE Transactions on Geoscience and Remote Sensing, 48, 1993-2004(2010).

[4] Benford J, Swegle J A, Schamiloglu E et al[M]. High power microwave, 2-13(2015).

[5] Danworaphong S, Tomoda M, Matsumoto Y et al. Three-dimensional imaging of biological cells with picosecond ultrasonics[J]. Applied Physics Letters, 106, 163701(2015).

[6] Rui L. Researches on Schottky diodes with high voltage capability[D], 1-4(2015).

[7] Zhao N Y, Yin P C, Qiu C et al. Effects of gamma and proton irradiation on 100 Gbps silicon modulators[J]. ACS Photonics, 12, 293-301(2025).

[8] Han C H, Hu Z Y, Tao Y S et al. Proton radiation effects on high-speed silicon Mach-Zehnder modulators for space application[J]. Science China Information Sciences, 65, 222401(2022).

[9] Zhang Q W, Liu Y, Li H F et al. A review of SiC sensor applications in high-temperature and radiation extreme environments[J]. Sensors, 24, 7731(2024).

[10] Wang L N, Chu X, Wu Q L et al. Effects of high-field velocity saturation on the performance of V-doped 6H silicon-carbide photoconductive switches[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 9, 4879-4886(2021).

[11] Huang J, Hu L, Ma Z Z et al. Study on photoelectric efficiency and failure mechanism of high purity 4H-SiC PCSS[J]. IEEE Transactions on Electron Devices, 70, 5762-5768(2023).

[12] Li Y F, Xiao L F, Luan C B et al. Ultrafast characteristics of integrated high-power photoconductive semiconductor switch based on 4H-SiC substrate[J]. IEEE Transactions on Electron Devices, 72, 128-134(2025).

[13] Yang B, Sun X, Li Y F et al. Influence of laser spot energy distribution on the on-state performance of GaN-based photoconductive switches[J]. High Power Laser and Particle Beams, 36, 115005(2024).

[14] Sun X, Xiao L F, Luan C B et al. Low ON-resistance and high peak voltage transmission efficiency based on high-purity 4H-SiC photoconductive semiconductor switch[J]. IEEE Transactions on Power Electronics, 39, 2013-2019(2024).

[15] Xu M, Dong H T, Liu C et al. Investigation of an opposed-contact GaAs photoconductive semiconductor switch at 1-kHz excitation[J]. IEEE Transactions on Electron Devices, 68, 2355-2359(2021).

[16] Ma C, Xu N, Liu Z N et al. 1.6-kV 1.5-kA GaAs avalanche semiconductor switch triggered by 4 μJ laser diode[J]. IEEE Journal of the Electron Devices Society, 8, 223-228(2020).

[17] Feng Z Y, Xiao L F, Luan C B et al. Dependence of conduction characteristics on compensation type and lattice structure of SiC photoconductive semiconductor switches[J]. Applied Optics, 60, 3182-3186(2021).

[18] Zhang H Y, Liu Y Q, Ning M et al. Research on dislocation of SiC crystal grown by the PVT using wet etching technology[J]. Semiconductor Technology, 39, 926-929, 935(2014).

[19] Neudeck P G, Huang W, Dudley M. Breakdown degradation associated with elementary screw dislocations in 4H-SiC p+n junction rectifiers[J]. Solid-State Electronics, 42, 2157-2164(1998).

[20] Yamamoto K, Nagaya M, Watanabe H et al. Influence of threading dislocations on lifetime of gate thermal oxide[J]. Materials Science Forum, 717/718/719/720, 477-480(2012).

[21] Takahashi J, Ohtani N, Kanaya M. Structural defects in α‑SiC single crystals grown by the modified-Lely method[J]. Journal of Crystal Growth, 167, 596-606(1996).

[22] Wellmann P J, Queren D, Müller R et al. Basal plane dislocation dynamics in highly p-type doped versus highly n-type doped SiC[J]. Materials Science Forum, 528, 79-82(2006).

[23] Guo Y, Liu C J, Zhang X H et al. Analysis and review of influencing factors of SiC homo-epitaxial wafers quality[J]. Journal of Synthetic Crystals, 53, 210-217(2024).

[24] Yang Y, Lin T, Chen Z M et al. Effect of growth gas flow rate on the defects density of SiC single crystal[J]. Journal of Semiconductors, 29, 851-854(2008).

[25] Chen X F, Zhang F S, Yang X L et al. Reduction of dislocation density of SiC crystals grown on seeds after H2 etching[C]. Greece, 25-29(2016).

[26] Komatsu N, Mitani T, Hayashi Y et al. Application of defect conversion layer by solution growth for reduction of TSDs in 4H-SiC bulk crystals by PVT growth[J]. Materials Science Forum, 963, 71-74(2019).

[27] Liang C B, Qin G Q, Liang J Z et al[M]. Electromagnetism, 104-105(2004).

[28] Feng C Z, Ma X K[M]. An introduction to engineering electromagnetic fields, 33-34(2000).

[29] Ding J, Guo C J[M]. Engineering electromagnetic fields and electromagnetic waves, 144-151(2005).