[1] [1] D. K. Jung, S. K. Shin, C.-H. Lee et al.. Wavelength-division-multiplexed passive optical nerwork based on spectrum-slicing techniques [J]. IEEE Photon. Technol. Lett., 1998, 10(9):1334～1336

[2] [2] K.-Y. Liou, U. Koren, K.Dreyer et al.. A 24-channel WDM transmitter for access systems using a loop-back spectrally sliced light-emitting diode [J]. IEEE Photon. Technol. Lett., 1998, 10(2):270～272

[3] [3] D. D. Sampson, W. T. Holloway. 100 mW spectrally-uniform broadband ASE source for spectrum-sliced WDM systems [J]. Electron. Lett., 1994, 30(19):1611～1612

[4] [4] O. Mikami, H. Yasaka, Y. Noguchi. Broader spectral width InGaAsP stacked active layer superluminescent diodes [J]. Appl. Phys. Lett., 1990, 56(11):987～989

[5] [5] Y. Noguchi, H. Yasaka, O. Mikami. Tandem active layer superluminescent diode with a very wide spectrum [J]. Appl. Phys. Lett., 1991, 58(18):1976～1978

[6] [6] C. H. Joyner, C. R. Doerr, J. C. Centanni et al.. Broad spectrum source for local access networks [J]. Electron. Lett., 1996, 32(8):749～751

[7] [7] A. T. Semenov, V. R. Shidlovshi, S. A. Safin. Wide spectrum single quantum well superluminescent diodes at 0.8 μm with bent optical waveguide [J]. Electron. Lett., 1993, 29(10):854～856

[8] [8] C. F. Lin, B. L. Lee, P.-C. Lin. Broad-band superluminescent diodes fabricated on a substrate with asymmetric dual quantum wells [J]. IEEE Photon. Technol. Lett., 1996, 8(11):1456～1458

[10] [10] Y. Liu, J. F. Song, Y. P. Zeng. High power 1.5 μm integrated superluminescent light source with tilted ridge waveguide [J]. Optical and Quantum Electronics, 2001, 33:1233～1239

[11] [11] M. Asada, A. Kameyama, Y. Suematsu. Gain and intervalence band absorption in quantum-well laers [J]. IEEE J. Quantum Electron., 1984, QE-20(7):745～753