Chinese Journal of Lasers, Volume. 50, Issue 17, 1714005(2023)

Research Progress on Ultrafast Intense Laser Based High‑Field Terahertz Generation and Application on Non‑Equilibrium State Materials

Kang Wang1,3, Yifei Fang1, Xi Cheng2, Zeyu Zhang2, Liwei Song1, Juan Du2, Ye Tian1, and Yuxin Leng1,2、*
Author Affiliations
  • 1State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 2School of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, Zhejiang, China
  • 3College of Optical Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
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    Figures & Tables(13)
    The photoconductive antenna generating terahertz wave
    Optical rectification generating terahertz wave
    Titled-pulse-front pump technique
    PCS-DSTMS crystals generating terahertz waves[49]
    Difference frequency of DSTMS crystals generating terahertz wave[64]
    Two-color field laser filaments generating terahertz waves[75]
    Liquid water film generating terahertz wave[13]
    Laser-solid target generating terahertz wave
    Mechanism of matter controlling of using high-filed terahertz wave[86]. (a) High-field terahertz pulse; (b) vibration rotation,spin precession, and electron acceleration; (c) scheme diagram of time-resolved spectroscopy of high-field THz pump-optical probe
    Hot carrier extraction process in SnO2/Sb2Se3 and CdS/Sb2Se3 heterojunctions[110]. (a) Time-dependent photoinduced terahertz conductivity of Sb2Se3 with CdS and SnO2 buffer layers; (b)(c) band diagrams of SnO2/Sb2Se3 and CdS/Sb2Se3; (d) ultrafast time-dependent scattering time of SnO2/Sb2Se3 and CdS/Sb2Se3; (e) decay time-dependent C parameter of SnO2/Sb2Se3 and CdS/Sb2Se3
    Schematic diagram of femtosecond laser-induced topological insulator surface radiating broadband terahertz waves of different polarization directions[117], where Ex is the displacement current radiation spectrum, and Eyz is the depletion current radiation terahertz spectrum
    Terahertz radiation enhancement induced by drift current amplification in WSe2/Si heterojunctions[121]. (a)‒(b) Time-domain spectroscopy of terahertz pulses generated from WSe2/Si, Si, and monolayer WSe2 upon excitation with different pump photon energies; (c) schematic illustration of the depletion field-accelerated charge transfer
    Polaron terahertz radiation in FAPbI3[125]. (a) Terahertz radiation induced by femtosecond laser in FAPbI3; (b) the process of non-equilibrium photocurrent coupling with the lattice anharmonic vibration to radiate terahertz waves at corresponding frequencies (P1 and P2 are the emission modes of the polaron); (c) the sub-band structure of FAPbI3; (d) wavelength-dependent change in coupled radiation intensity
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    Kang Wang, Yifei Fang, Xi Cheng, Zeyu Zhang, Liwei Song, Juan Du, Ye Tian, Yuxin Leng. Research Progress on Ultrafast Intense Laser Based High‑Field Terahertz Generation and Application on Non‑Equilibrium State Materials[J]. Chinese Journal of Lasers, 2023, 50(17): 1714005

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    Paper Information

    Category: terahertz technology

    Received: Jun. 5, 2023

    Accepted: Jul. 21, 2023

    Published Online: Sep. 13, 2023

    The Author Email: Leng Yuxin (lengyuxin@siom.ac.cn)

    DOI:10.3788/CJL230891

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