Chinese Journal of Lasers, Volume. 45, Issue 8, 801006(2018)

976 nm Wide-Stripe Semiconductor Laser with High-Performance

Hu Hai1,2,3, Qiu Bocang1,2,3, He Jinguo1,2,3, Wang Weimin2, Zhao Chuzhong2, Liu Wenbin2, Kuang Langxing2, and Bai Xue2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    Figures & Tables(8)
    Double-asymmetric waveguide (black line) and simulated intensity distribution (blue line)
    Calculation results of far-field
    Relationship between (a) operation current or (b) WPE and cavity length and AR-reflectivity
    Power-current curves and efficiency-current curves obtained by CW. (a) 20 ℃; (b) 40 ℃
    Variation of slow-axis divergence angle (95% power) with CW current
    Power-time curves of nine devices in aging-test under the conditions of 40 ℃ and continuous current of 15 A
    (a) Power-QCW current curves of COS before and after 4740 hour aging-test at 30 ℃; (b) optical spectral curves of COS before and after 4740 hour aging-test at 20 A QCW current)
    • Table 1. Structure of 976 nm epitaxial material

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      Table 1. Structure of 976 nm epitaxial material

      MaterialcompositionThickness /μmDescriptionDoping type
      GaAs0.200Ohmic contactP++
      Al0.31GaAs1.200Upper claddingP
      Al0.21GaAs0.500Upper waveguideI
      In0.16GaAs0.007Quantum wellI
      Al0.21GaAs0.700Lower waveguideI
      Al0.21GaAs0.400Lower waveguideN
      Al0.27GaAs1.000Lower claddingN
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    Hu Hai, Qiu Bocang, He Jinguo, Wang Weimin, Zhao Chuzhong, Liu Wenbin, Kuang Langxing, Bai Xue. 976 nm Wide-Stripe Semiconductor Laser with High-Performance[J]. Chinese Journal of Lasers, 2018, 45(8): 801006

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    Paper Information

    Category: laser devices and laser physics

    Received: Feb. 8, 2018

    Accepted: --

    Published Online: Aug. 11, 2018

    The Author Email:

    DOI:10.3788/CJL201845.0801006

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