Chinese Journal of Lasers, Volume. 45, Issue 8, 801006(2018)
976 nm Wide-Stripe Semiconductor Laser with High-Performance
Fig. 1. Double-asymmetric waveguide (black line) and simulated intensity distribution (blue line)
Fig. 3. Relationship between (a) operation current or (b) WPE and cavity length and AR-reflectivity
Fig. 4. Power-current curves and efficiency-current curves obtained by CW. (a) 20 ℃; (b) 40 ℃
Fig. 6. Power-time curves of nine devices in aging-test under the conditions of 40 ℃ and continuous current of 15 A
Fig. 7. (a) Power-QCW current curves of COS before and after 4740 hour aging-test at 30 ℃; (b) optical spectral curves of COS before and after 4740 hour aging-test at 20 A QCW current)
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Hu Hai, Qiu Bocang, He Jinguo, Wang Weimin, Zhao Chuzhong, Liu Wenbin, Kuang Langxing, Bai Xue. 976 nm Wide-Stripe Semiconductor Laser with High-Performance[J]. Chinese Journal of Lasers, 2018, 45(8): 801006
Category: laser devices and laser physics
Received: Feb. 8, 2018
Accepted: --
Published Online: Aug. 11, 2018
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