Researching | GaN-based blue laser diodes with output power of 5 W and lifetime over 20 000 h aged at 60 °C

Journal of Semiconductors, Volume. 46, Issue 4, 040501(2025)

GaN-based blue laser diodes with output power of 5 W and lifetime over 20 000 h aged at 60 °C

Lei Hu¹, Siyi Huang¹, Zhi Liu¹, Tengfeng Duan¹, Si Wu¹, Dan Wang¹, Hui Yang², Jun Wang³, and Jianping Liu^1,2、*

Author Affiliations

¹Suzhou Ganbright Optoelectronics Technology Co., Ltd, Suzhou 215000, China

²Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215000, China

³Suzhou Everbright Photonics Co., Ltd, Suzhou 215000, China

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References(24)

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[7] S Nakamura, M Senoh, T Mukai. High-power InGaN/GaN double-heterostructure violet light emitting diodes. Appl Phys Lett, 62, 2390(1993).

[8] S Nakamura, T Mukai, M Senoh. Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes. Appl Phys Lett, 64, 1687(1994).

[9] Y Nakatsu, Y Nagao, K Kozuru et al. High-efficiency blue and green laser diodes for laser displays. Gallium Nitride Materials and Devices XIV, 10918(2019).

[10] H König, M Ali, W Bergbauer et al. Visible GaN laser diodes: from lowest thresholds to highest power levels. Novel In-Plane Semiconductor Lasers XVIII, 10939(2019).

[11] F Liang, D G Zhao, Z S Liu et al. GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature. J Semicond, 42, 112801(2021).

[12] L Hu, D Y Li, J P Liu et al. High-power GaN-based blue laser diodes with 7.5 W of light output power under continuous-wave operation. Acta Photonica Sinic, 51, 0251209(2022).

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[15] J P Liu, L Q Zhang, D Y Li et al. GaN-based blue laser diodes with 2.2 W of light output power under continuous-wave operation. IEEE Photonics Technol Lett, 29, 2203(2017).

[16] J P Liu, Z C Li, L Q Zhang et al. Realization of InGaN laser diodes above 500 nm by growth optimization of the InGaN/GaN active region. Appl Phys Express, 7, 111001(2014).

[17] A Q Tian, J P Liu, L Q Zhang et al. Green laser diodes with low threshold current density via interface engineering of InGaN/GaN quantum well active region. Opt Express, 25, 415(2017).

[18] L Hu, X Y Ren, J P Liu et al. High-power hybrid GaN-based green laser diodes with ITO cladding layer. Photon Res, 8, 279(2020).

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Lei Hu, Siyi Huang, Zhi Liu, Tengfeng Duan, Si Wu, Dan Wang, Hui Yang, Jun Wang, Jianping Liu. GaN-based blue laser diodes with output power of 5 W and lifetime over 20 000 h aged at 60 °C[J]. Journal of Semiconductors, 2025, 46(4): 040501

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Paper Information

Category: Research Articles

Received: Dec. 2, 2024

Accepted: --

Published Online: May. 21, 2025

The Author Email: Jianping Liu (JPLiu,)

DOI:10.1088/1674-4926/24110039

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology