Chinese Journal of Lasers, Volume. 46, Issue 6, 0614022(2019)

190-GHz Balanced Frequency Doubler with High Output Power

Peng Xu1, Dabao Yang1, Lisen Zhang2, Shixiong Liang2、**, Xubo Song1, Guodong Gu1, Yuanjie Lü2, and Zhihong Feng2、*
Author Affiliations
  • 1 The 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang, Hebei 0 50051, China
  • 2 National Key Laboratory of ASIC, Shijiazhuang, Hebei 0 50051, China
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    Figures & Tables(6)
    Schematic of frequency doubler
    Structural diagram of frequency doubler
    Physical map of frequency doubler
    Block diagram of testing system
    Measured output power and efficiency of frequency doubler
    • Table 1. Parameters of single anode junction of Schottky diode

      View table

      Table 1. Parameters of single anode junction of Schottky diode

      Seriesresistance RsIdeality factor nSaturationcurrent Is /fAJunctionpotential Vf /VZero-biascapacitance Cj0 /fF
      41.2480.6215
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    Peng Xu, Dabao Yang, Lisen Zhang, Shixiong Liang, Xubo Song, Guodong Gu, Yuanjie Lü, Zhihong Feng. 190-GHz Balanced Frequency Doubler with High Output Power[J]. Chinese Journal of Lasers, 2019, 46(6): 0614022

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    Paper Information

    Category: terahertz technology

    Received: Jan. 23, 2019

    Accepted: Mar. 7, 2019

    Published Online: Jun. 14, 2019

    The Author Email: Liang Shixiong (wialliam@163.com), Feng Zhihong (blueledviet@yahoo.com.cn)

    DOI:10.3788/CJL201946.0614022

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