Transient Thermal Characteristic Analysis of Tunnel Regeneration High-Power Semiconductor Laser

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Chinese Journal of Lasers, Volume. 31, Issue 5, 518(2004)

[in Chinese]^*, [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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References(2)

[2] [2] T. Kobayashi, Y. Furukawa. Temperature distributions in the GaAs-AlGaAs double-heterostructure laser below and above the threshold current [J]. Jpn. J. Appl. Phys., 1975, 14(12):1981～1986

[4] [4] Y. G. Zhao, J. G. McInerney. Transient temperature response of vertical-cavity surface-emitting semiconductor lasers [J]. IEEE J. Quantum Electron., 1995, 31(9):1668～1673

CLP Journals

[1] Shen Yuan, Deng Qilin. Optimization Research of Temperature Controlling Performance for Green LD End-Pumped Solid-State Laser[J]. Chinese Journal of Lasers, 2011, 38(9): 902004

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Transient Thermal Characteristic Analysis of Tunnel Regeneration High-Power Semiconductor Laser[J]. Chinese Journal of Lasers, 2004, 31(5): 518

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Paper Information

Category: Laser physics

Received: Jul. 28, 2003

Accepted: --

Published Online: Jun. 12, 2006

The Author Email: (lupengcheng@emails.bjut.edu.cn)

DOI:

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology