AEROSPACE SHANGHAI, Volume. 42, Issue 4, 81(2025)
Analysis of Single-event Burnout Mechanism in β-Ga2O3 Schottky Barrier Diodes
Fig. 2. Variations of the device leakage current with time during Kr ion irradiation at different reverse bias voltages
Fig. 3. SEM image of the failure region with SEB after Kr ion irradiation
Fig. 4. Variations of the maximum lattice temperature in the device with time due to Kr ion irradiation at different reverse bias voltages
Fig. 6. Relationship between the device cathode leakage current and time during irradiation at different reverse bias voltages
Fig. 9. Time evolution of the secondary ion incident on the β-Ga2O3 SBD device
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Xing LI, Teng MA, Silei ZHONG, Chao PENG, Hong ZHANG, Zhangang ZHANG, Zhifeng LEI. Analysis of Single-event Burnout Mechanism in β-Ga2O3 Schottky Barrier Diodes[J]. AEROSPACE SHANGHAI, 2025, 42(4): 81
Category: Space Radiation Effects
Received: Jun. 4, 2025
Accepted: --
Published Online: Sep. 29, 2025
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