AEROSPACE SHANGHAI, Volume. 42, Issue 4, 81(2025)

Analysis of Single-event Burnout Mechanism in β-Ga2O3 Schottky Barrier Diodes

Xing LI, Teng MA, Silei ZHONG, Chao PENG, Hong ZHANG, Zhangang ZHANG, and Zhifeng LEI
Author Affiliations
  • Key Laboratory of Physical Reliability of Electronic Components and Their Applied Technology,Fifth Research Institute of Electronics of the Ministry of Industry and Information Technology,Guangzhou511370,,China
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    Figures & Tables(9)
    Cross-sectional schematic of the β-Ga2O3 SBD
    Variations of the device leakage current with time during Kr ion irradiation at different reverse bias voltages
    SEM image of the failure region with SEB after Kr ion irradiation
    Variations of the maximum lattice temperature in the device with time due to Kr ion irradiation at different reverse bias voltages
    I-V characteristic curves of the β-Ga2O3 SBD device
    Relationship between the device cathode leakage current and time during irradiation at different reverse bias voltages
    SEM images of the failure region
    TCAD simulation
    Time evolution of the secondary ion incident on the β-Ga2O3 SBD device
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    Xing LI, Teng MA, Silei ZHONG, Chao PENG, Hong ZHANG, Zhangang ZHANG, Zhifeng LEI. Analysis of Single-event Burnout Mechanism in β-Ga2O3 Schottky Barrier Diodes[J]. AEROSPACE SHANGHAI, 2025, 42(4): 81

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    Paper Information

    Category: Space Radiation Effects

    Received: Jun. 4, 2025

    Accepted: --

    Published Online: Sep. 29, 2025

    The Author Email:

    DOI:10.19328/j.cnki.2096-8655.2025.04.009

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