The single-event burnout （SEB） phenomenon in β-Ga₂O₃ Schottky barrier diode （SBD） under heavy ion and high-energy proton irradiation conditions is systematically investigated.The results demonstrate that the reverse bias voltage is a crucial factor influencing the failure of β-Ga₂O₃ SBDs.SEB occurs only when the reverse bias voltage reaches a specific critical value，and the higher the reverse bias voltage，the shorter the time to failure.Through the technology computer aided design （TCAD） simulations and scanning electron microscopy （SEM） analysis，the mechanisms behind SEB are further elucidated，showing that the accumulation of high electric fields and the electron-hole pairs induced by the irradiation are the primary causes of SEB.The thermal effects and enhanced electric field induced by high-energy proton and heavy ion irradiation lead to localized overheating in the device，which in turn triggers the occurrence of SEB.This research provides theoretical insights and engineering references for optimizing the design of β-Ga₂O₃ devices and improving their radiation hardness，which is crucial for applications in high-radiation environments.