Journal of Infrared and Millimeter Waves, Volume. 39, Issue 2, 221(2020)
Fig. 1. (a) Schematics of SiC grating structure and definitions of geometric parameters, and (b) CST-simulated infrared spectrum of 4H-SiC grating(red) and 4H-SiC substrate(black)
Fig. 2. The evolution of electric-field distribution of the four optical modes
Fig. 3. CST-simulated infrared spectrum of one-dimensional 4H-SiC grating structure with varying structural parameters
Fig. 4. Calculated energy band structures for 4H-SiC gratings with different periodicities 8.7 μm(black), 9.0 μm(red), 9.3 μm(blue), 9.6 μm(purple)
Fig. 5. (a) SEM image of fabricated 4H-SiC grating,(b) FTIR spectroscopy of the 4H-SiC grating,(c)-(f) the measured IR spectroscopy of the 4H-SiC grating with changing parameter
Fig. 6. The IR spectroscopy of SiC grating deposited by Al2O3(a) HfO2(b) with various thicknesses. The linear relation between the change of the thickness of Al2O3(c) HfO2(d) and the offset of the PSPhPs peak position
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Merdan TUHTASUN, Chen-Fang FAN, Xiao-Wen LI, Hui SHI, Feng LIU.
Category: Infrared Spectroscopy and Spectral Analysis
Received: Aug. 6, 2019
Accepted: --
Published Online: Apr. 29, 2020
The Author Email: Hui SHI (fliu@shnu.edu.cn)