[1] [1] Chen Xiang, Xing Yanhui, Han Jun, et al.. Influence of AlN interfacial layer on electrical properties of AlGaN/AlN/GaN HEMT materials grown by MOCVD[J]. Chinese J Lasers, 2013, 40(6): 0606005.

[2] [2] Lian Ruikai, Li Lin, Fan Yaming, et al.. Effect of AlN buffer layer thickness and Al pre-treatment on properties of GaN/Si(111) epilayer[J]. Chinese J Lasers, 2013, 40(1): 0106001.

[3] [3] Liu Junlin, Xiong Chuanbing, Cheng Haiying, et al.. Effect of AlN interlayer on growth of GaN films on silicon substrate[J]. Acta Optica Sinica, 2014, 34(2): 0231003.

[4] [4] Su Chen, Chen Guichu. Zheng Shuwen, et al.. Response characteristic of blue light-emitting diodes[J]. Acta Optica Sinica, 2013, 33(6): 0623002.

[5] [5] Wang C M, Wang X L, Hu G X, et al.. The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures[J]. Journal of Crystal Growth, 2006, 289(2): 415-418.

[6] [6] Zhou S Z, Wang H Y, Lin Z T, et al.. Study of defects in LED epitaxial layers grown on the optimized hemispherical patterned sapphire substrates[J]. Jpn J Appl Phys, 2014, 53(2): 025503.

[7] [7] Wright A F . Substitutional and interstitial carbon in wurtzite GaN[J]. J Appl Phys, 2002, 92(5): 2575-2585.

[8] [8] Poblenz C, Waltereit P, Rajan S, et al.. Effect of carbon doping on buffer leakage in AlGaN /GaN high electron mobility transistors [J]. J Vac Sci Technol B, 2004, 22(3): 1071-1023.

[9] [9] Gogova D, Rudko G Y, Siche D, et al.. A new approach to grow C-doped GaN thick epitaxial layers[J]. Phys Status Solidi C, 2011, 8(7-8): 2120-2122.

[10] [10] Haffouz S, Tang H, Bardwell J A, et al.. AlGaN/GaN field effect transistors with C-doped GaN buffer layer as an electrical isolation template grown by molecular beam epitaxy[J]. Solid-State Electronics, 2005, 49(5): 802-807.

[11] [11] Webb J B, Tang H, Rolfe S, et al.. Semi- insulating C- doped GaN and high- mobility AlGaN/GaN heterostrucrtures grown by ammonia molecular beam epitaxy[J]. Appl Phys Lett, 1999, 75(7): 953-955.

[12] [12] Wang Hao. Study on GaN-Based HEMT Materials with High-Resistance Buffer Layer and High Mobility[D]. Xi′an: Xidian University, 2011. 40-43.

[13] [13] Swager C H, Wright A F, Yu J, et al.. Role of carbon in GaN[J]. J Appl Phys, 2002, 92(11): 6553-6560.

[14] [14] Lyons J L, Janotti A, Walle C G V D. Carbon impurities and the yellow luminescence in GaN[J]. Appl Phys Lett, 2010, 97(15): 152108.

[15] [15] Zhang L M, Zhang X D, Liu Z M. A study of photoluminescence and micro-Raman scattering in C-implanted GaN[J]. Nuclear Techniques, 2010, 33(1): 15-19.

[16] [16] Ye Jiandong, Gu Shulin, Wang Lizong, et al.. Optical characteristics of C-doped GaN[J]. Journal of Semiconductors, 2002, 23(7): 717-721.

[17] [17] Deng Xuguang, Han Jun, Xing Yanhui, et al.. Growth of high resistive GaN by MOCVD[J]. Chinese Journal of Luminesence, 2013, 34(3): 352-355.

[18] [18] Huang Yu. The Investigation of the Effect of Growth Conditions on the Carbon, Hydrogen and Oxygen Impurities in the GaN Film Deposited on the Silicon Substrate[D]. Nanchang: Nanchang University, 2012. 33-37.

[19] [19] Liu Enke, Zhu Bingsheng, Luo Jinsheng. Semiconductor Physics[M]. Beijing: Publishing House of Electronics Industry, 2008. 115-116.

[20] [20] K Kuriyama, Y Mizuki, H Sano, et al.. Nuclear reaction analysis of carbon-doped GaN: The interstitial carbon as an origin of yellow luminescence[J]. Solid State Commun, 2005, 135(1-2): 99-102.