Photonics Research, Volume. 12, Issue 5, 1067(2024)

On-chip integrated few-mode erbium–ytterbium co-doped waveguide amplifiers

Xiwen He1,2、†, Deyue Ma1,2、†, Chen Zhou1,3, Mingyue Xiao4, Weibiao Chen1,2, and Zhiping Zhou1,5、*
Author Affiliations
  • 1Aerospace Laser Technology and Systems Department, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
  • 4School of Microelectronics, Shanghai University, Shanghai 201800, China
  • 5State Key Laboratory of Advanced Optical Communications Systems and Networks, School of Electronics, Peking University, Beijing 100871, China
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    Figures & Tables(14)
    Schematic diagram of the on-chip FM-EYCDWA.
    Relationship between waveguide width and effective refractive index at different wavelength. (a) 1550 nm. (b) 980 nm.
    (a) 3D schematic of the proposed MUX, (b) top view of the proposed PBS at the 1550 nm wavelength, and (c) top view of the ADC at the 980 nm wavelength. (d)–(f) Light propagation of (d) TE0-TE0, (e) TM0-TM1-TM0, and (f) TE0-TE1 in the corresponding coupler at 1550 nm wavelength.
    (a) 3D schematic of the proposed PR. (b), (c) Light propagation profiles for the PR at 1550 nm wavelength for (b) TE0 mode and (c) TM0 mode.
    Calculated IL and CT at wavelengths from 1500 nm to 1600 nm. (a) TE0-TE0, (b) TE0-TM0, (c) TM0-TM1-TM0, and (d) TE0-TE1.
    Light propagation of (a) TE0-TE0 and (b) TE0-TE1 in the corresponding coupler at 980 nm wavelength.
    Calculated IL and CT at wavelengths from 930 nm to 1030 nm. (a) TE0-TE1 and (b) TE0-TM0.
    Diagram of the designed eccentric waveguide structure.
    Fabrication processes for an FM-EYCDWA.
    (a) Gain characteristics under different length. (b) Gain characteristics under different pump power.
    (a) Gain characteristics under co-propagating pumping. (b) Gain characteristics under co-propagating pumping and eccentric design.
    • Table 1. Parameter Values Used for Modeling

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      Table 1. Parameter Values Used for Modeling

      ParameterSymbolValue
      Er3+ concentrationNEr1.644×1027  m3
      Yb3+ concentrationNYb1.644×1027  m3
      Er3+ absorption cross section at 1530 nmσ125.051×1025  m2
      Er3+ emission cross section at 1530 nmσ217.303×1025  m2
      Er3+ absorption cross section at 980 nmσ137.028×1025  m2
      Er3+ emission cross section at 980 nmσ311.251×1025  m2
      Yb3+ absorption cross section at 980 nmσ12Yb1.0×1024  m2
      Yb3+ emission cross section at 980 nmσ21Yb1.0×1024  m2
      Er3+ lifetime at I411/2 levelτ322 μs
      Er3+ lifetime at I413/2 levelτ214.23 ms
      Yb3+ lifetimeτ21Yb1.1 ms
      Pump wavelengthλp980 nm
      Signal wavelengthλs1530 nm
      Propagation loss of the pump laserαp1 dB/cm
      Propagation loss of the signal laserαs1 dB/cm
    • Table 2. Overlap Integral Factors of Various Signal and Pump Modes

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      Table 2. Overlap Integral Factors of Various Signal and Pump Modes

      Pump
      OverlapFactorsTE0TM0TE1TM1TE2
      SignalTE00.98890.99280.87760.85220.8773
      TM00.96030.97490.86230.84840.8608
      TE10.86000.87140.98170.98180.8967
    • Table 3. Corrected Mode Field Confinement Factors

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      Table 3. Corrected Mode Field Confinement Factors

      ΓiWithout DMG EqualizationCo-Propagating PumpingCo-Propagating Pumping and Eccentric Waveguide Design
      TE00.88460.80610.6015
      TM00.78070.71960.6016
      TE10.73470.79810.5998
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    Xiwen He, Deyue Ma, Chen Zhou, Mingyue Xiao, Weibiao Chen, Zhiping Zhou, "On-chip integrated few-mode erbium–ytterbium co-doped waveguide amplifiers," Photonics Res. 12, 1067 (2024)

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    Paper Information

    Category: Silicon Photonics

    Received: Dec. 20, 2023

    Accepted: Mar. 5, 2024

    Published Online: May. 7, 2024

    The Author Email: Zhiping Zhou (zjzhou@pku.edu.cn)

    DOI:10.1364/PRJ.516242

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