[1] [1] Vedam K. Spectroscopic ellipsometry: A historical overivew. Thin Solid Films, 1998, 313～314(1～2):1～9

[2] [2] Aspnes D E, Studna A A. High precision scanning ellipsometer. Appl. Opt., 1975, 14(1):220～228

[3] [3] Johnson R L, Barth J, Cardona M. Spectroscopic ellipsometry with syncrotron radiation. Rev. Sci. Instrum., 1989, 60(7):2209～2212

[4] [4] Jellison G E. Optical functions of GaAs, GaP, and Ge determined by two-channel polarization modulation ellipsometry. Optical Materials, 1992, 1(3):151～160

[5] [5] Chen L Y, Feng X W, Su Y et al.. Design of a scanning ellipsomter by synchronous rotation of the polarizer and analyzer. Appl. Opt., 1994, 33(7):1299～1305

[6] [6] Aspnes D E. Fourier transform detection system for rotating-analyzer ellispometers. Opt. Commun., 1973, 8(3):222～225

[7] [7] Roseler A. IR spectroscopic ellipsometry: Instrumentation and result. Thin Solid Films, 1993, 234(1～2):307～313

[8] [8] Drevillon B. Spectroscopic ellipsometry in the infrared range. Thin Solid Films, 1998, 313～314(1～2):625～630

[9] [9] Ossikovski R, Blayo N, Drevillon B et al.. Determination of the composition and thickness of borophosphosilicate glass films by infrared ellipsometry. Appl. Phys. Lett., 1994, 65(10):1236～1238

[10] [10] Brunet-Bruneau A, Vuye G, Frigerio J M et al.. Infrared ellipsometry investigation of SiOxNy thin films on silicon. Appl. Opt., 1996, 35(25):4998～5004

[11] [11] Tiwald T E, Thompson D W, Woollam J A et al.. Application of IR variable angle spectroscopic ellipsometry to the determination of free carrier concentration depth profiles. Thin Solid Films, 1998, 313～314(1～2):661～666

[12] [12] Gugger H, Jurich M, Swalen J D. Observation of an index-of-refraction-induced change in the Drude parameters of Ag films. Phys. Rev. (B), 1984, 30(8):4189～4195