Fig. 1. Schematic diagram for mesh dividing of FDTD on absorption front (AF) model

Fig. 2. Temperature fields near impurity source after different laser irradiation at different laser energy densities (material’s initial temperature 300 K, laser wavelength 1064 nm, pulse width 400 ps; irradiation time 400 ps)

Fig. 3. Highest temperature near iron impurity after irradiation at different laser energy densities (0.2, 0.24, 0.28, 0.32, 0.36, 0.40, 0.45 J·cm⁻²) (initial material temperature 300 K, laser wavelength 1064 nm, pulse width 400 ps)

Fig. 4. Temperature field near impurity source after laser radiation. Here the initial temperature of material is 300 K, laser pulse width is 400 ps, wavelength is 1064 nm, laser energy is 0.28 J·cm⁻² (irradiation time 400 ps)

Fig. 5. Damage radius of monocrystalline silicon after the irradiation of different laser energy densities. Here, initial temperature of the material is 300 K, laser wavelength is 1064 nm, and pulse width is 400 ps

Fig. 6. Propagation of absorption front during laser irradiation (time interval of each curve is 100 ps)

Fig. 7. Maximum temperature near iron impurity after laser (400 ps, 1064 nm) irradiation at different initial temperatures of monocrystalline silicon

Fig. 8. Relationship between damage threshold and initial temperature of monocrystalline silicon (laser wavelength 1064 nm, pulse width 400 ps)