Fig. 1. (Color online) Theoretical benchmark plot of on-resistance versus breakdown voltage for power devices based on β-Ga₂O₃ and other major semiconductors.

Fig. 2. (Color online) (a) The rocking curve of the β-Ga₂O₃ substrates measured by HRXRD. (b) The 2D and 3D AFM images of the surface morphology of the β-Ga₂O₃ substrates. (c) Top and cross-section view of the fabricated SBDs.

Fig. 3. (Color online) Temperature-dependent forward J–V characteristics of β-Ga₂O₃ SBDs in (a) linear scale and (b) log scale.

Fig. 4. (Color online) (a) Comparision of on-resistance of previously reported β-Ga₂O₃ SBDs on various crystal orientations. (b) The turn-on voltage was obtained by linear extrapolation of the linear I–V curves.

Fig. 5. (Color online) (a) Ideality factor and Schottky barrier height as a function of temperature from 300 to 480 K. (b) Ideality factor versus Schottky barrier height. (c) Plot of effective barrier height and n⁻¹–1 versus 1000/T with error bars. (d) Original and modified Richardson plot for β-Ga₂O₃ SBDs. The dashed line shows the fitting curve.

Fig. 6. (Color online) C-V characteristics for β-Ga₂O₃ SBDs at 1 MHz. The doping concentration of the devices was also extracted.

Fig. 7. (Color online) Temperature-dependent reverse J–V characteristics of the β-Ga₂O₃ SBDs in the (a) linear scale and (b) log scale.

Fig. 8. (Color online) (a) Arrhenius plot of reverse leakage currents of the β-Ga₂O₃ SBDs with the activation energy extracted. (b) Conductivity as a function of 1/T^1/2 for the β-Ga₂O₃ SBDs. The inset shows the electron transport in the 1D-VRH conduction model.

Fig. 9. (Color online) Leakage current as a function of contact distance between ohmic and Schottky contacts at different reverse voltages.