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Chinese Optics Letters, Volume. 22, Issue 8, 082501(2024)

4 × 112 Gb/s hybrid integrated silicon receiver based on photonic-electronic co-design

Ye Jin1,2,3, Yujun Xie1,2,3, Zhihan Zhang2,4,5, Donglai Lu2,4, Menghan Yang1,2,3, Ang Li1,2,3, Xiangyan Meng1,2,3, Yang Qu1,2,3, Leliang Li2,4, Nuannuan Shi1,2,3, Wei Li1,2,3, Ninghua Zhu1,2,3, Nan Qi2,4、*, and Ming Li1,2,3、**
Author Affiliations
  • 1Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100190, China
  • 3School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 4Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 5Peng Cheng Laboratory, Shenzhen 518055, China
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    Ye Jin, Yujun Xie, Zhihan Zhang, Donglai Lu, Menghan Yang, Ang Li, Xiangyan Meng, Yang Qu, Leliang Li, Nuannuan Shi, Wei Li, Ninghua Zhu, Nan Qi, Ming Li, "4 × 112 Gb/s hybrid integrated silicon receiver based on photonic-electronic co-design," Chin. Opt. Lett. 22, 082501 (2024)

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    Paper Information

    Category: Optoelectronics

    Received: Jan. 24, 2024

    Accepted: Apr. 11, 2024

    Published Online: Aug. 14, 2024

    The Author Email: Nan Qi (qinan@semi.ac.cn), Ming Li (ml@semi.ac.cn)

    DOI:10.3788/COL202422.082501

    CSTR:32184.14.COL202422.082501

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology