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Chinese Journal of Lasers, Volume. 29, Issue 6, 513(2002)

Package Technique for CW 40 W 808 nm Quantum-well Linear Array Diode Laser

[in Chinese]1,2、*, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, and [in Chinese]2
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    [1] [1] J. K. Wade, L. J. Mawst, D. Botez. High continuous wave, 0.8 μm-band, Al-free active-region diode lasers [J]. Appl. Phys. Lett., 1997, 70(2):149～151

    [2] [2] C. Hanke, L. Korte, B. Acklin et al.. Highly reliable 40 W-CW-InGaAlAs/GaAs 808 nm laser bars [C]. SPIE, 1999, 3462:47～53

    [3] [3] J. Jandeleit, N. Wiedmann, A. Ostlender et al.. Packaging and characterization of high power diode lasers [C]. SPIE, 2000, 3945:270～277

    [5] [5] T. Ebert, J. Beiesenbach, H. G. Treusch et al.. Optimization of micro channel heat sink for high power diode laser in copper technology [C]. SPIE, 1998, 3285:25～30

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Package Technique for CW 40 W 808 nm Quantum-well Linear Array Diode Laser[J]. Chinese Journal of Lasers, 2002, 29(6): 513

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    Paper Information

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    Received: Apr. 2, 2001

    Accepted: --

    Published Online: Aug. 8, 2006

    The Author Email: (tangchun21@Yahoo.com)

    DOI:

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology