Selective growth and characterization of ZnO nanorods assembled a hexagonal pattern on H2-decomposed GaN epilayer

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

doi:10.1007/s12200-013-0350-x

Frontiers of Optoelectronics, Volume. 6, Issue 4, 440(2013)

Selective growth and characterization of ZnO nanorods assembled a hexagonal pattern on H2-decomposed GaN epilayer

[in Chinese]^1,2, [in Chinese]², [in Chinese]^1、*, [in Chinese]¹, and [in Chinese]²

Author Affiliations

¹Department of Physics, Jianghan University, Wuhan 430056, China

²Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China

show less

Figures & Tables(0)

Tools

Get Citation

Copy Citation Text

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Selective growth and characterization of ZnO nanorods assembled a hexagonal pattern on H2-decomposed GaN epilayer[J]. Frontiers of Optoelectronics, 2013, 6(4): 440

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: RESEARCH ARTICLE

Received: May. 29, 2013

Accepted: Jul. 1, 2013

Published Online: Mar. 3, 2014

The Author Email: (xlzhu.jhun@gmail.com)

DOI:10.1007/s12200-013-0350-x

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology