Researching | Total ionizing dose effect of enhanced AlGaN/GaN HEMT devices under different bias

NUCLEAR TECHNIQUES, Volume. 46, Issue 11, 110502(2023)

Total ionizing dose effect of enhanced AlGaN/GaN HEMT devices under different bias

Yiwu QIU, Fengqi GUO, Yanan YIN, Pingwei ZHANG, and Xinjie ZHOU^*

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China Electronics Technology Group Corporation No.58 Research Institute, Wuxi 214035, China

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References (24)

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References(24)

[1] Luo B, Johnson J W, Ren F et al. Influence of 60Co γ-rays on dc performance of AlGaN/GaN high electron mobility transistors[J]. Applied Physics Letters, 80, 604-606(2002).

[2] Umana-Membreno G A, Dell J M, Parish G et al. Effect of 60Co gamma-irradiation on two-dimensional electron gas transport and device characteristics of AlGaN/GaN HEMTs[J]. Physica Status Solidi, 2, 2581-2584(2010).

[3] Yadav A, Flitsiyan E, Chernyak L et al. Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors[J]. Radiation Effects and Defects in Solids, 170, 377-385(2015).

[4] Lidow A, Nakata A, Rearwin M et al. Single-event and radiation effect on enhancement mode gallium nitride FETs[C], 1-7(2015).

[5] Islam Z, Paoletta A L, Monterrosa A M et al. Heavy ion irradiation effects on GaN/AlGaN high electron mobility transistor failure at off-state[J]. Microelectronics Reliability, 102, 113493(2019).

[6] ZHANG Dexi, CHEN Wei, LUO Yinhong et al. Neutron radiation effects of P-gate normally-off GaN power switching transistor[J]. Modern Applied Physics, 9, 53-58(2018).

[7] CHANG Siyuan, YANG Shengsheng, WEN Xuan et al. Experimental study on the total ionizing dose effects of nonvolatile RRAM[J]. Nuclear Techniques, 43, 120502(2020).

[8] Kim B J, Ahn S, Ren F et al. Effects of proton irradiation and thermal annealing on off-state step-stressed AlGaN/GaN high electron mobility transistors[J]. Journal of Vacuum Science & Technology B, 34, 041231(2016).

[9] WU Suzhen, XU Zheng, XU Haiming et al. Study of X-ray total-ionizing-dose effect in MIS type GaN HEMT device[J]. Electronics and Packaging, 20, 5(2020).

[10] LIU Mohan, LU Wu, MA Wuying et al. Bias effects on total ionizing dose radiation response of NPN silicon-germanium hetero-junction bipolar transistors[J]. Nuclear Techniques, 38, 060202(2015).

[11] CHEN Faguo, YU Weiyue, LIANG Runcheng et al. Development of extendable on-line test system for total ionizing dose effect of microprocessor[J]. Nuclear Techniques, 45, 110404(2022).

[12] Wang Y P, Luo Y H, Wang W et al. 60Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices[J]. Chinese Physics C, 37, 056201(2013).

[13] Zheng X, Feng S W, Peng C et al. Evidence of GaN HEMT Schottky gate degradation after gamma irradiation[J]. IEEE Transactions on Electron Devices, 66, 3784-3788(2019).

[15] Quan S, Hao Y E, Ma X H et al. Influence of 60Co gamma radiation on fluorine plasma treated enhancement-mode high-electron-mobility transistor[J]. Chinese Physics B, 20, 058501(2011).

[16] Lee J, Yadav A, Antia M et al. Low dose 60Co gamma-irradiation effects on electronic carrier transport and DC characteristics of AlGaN/GaN high-electron-mobility transistors[J]. Radiation Effects and Defects in Solids, 172, 250-256(2017).

[17] Uemoto Y, Hikita M, Ueno H et al. A normally-off AlGaN/GaN transistor with RonA=2.6 mΩ∙cm2 and BVds=640 V using conductivity modulation[C], 1-4(2007).

[18] MU Changgen, DANG Rui, YUAN Peng et al. Implementation methods and research progress of enhanced GaN HEMT devices[J]. Electronics and Packaging, 22, 70-79(2022).

[19] Puzyrev Y S, Tuttle B R, Schrimpf R D et al. Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors[J]. Applied Physics Letters, 96, 053505(2010).

[20] Vitusevich S A, Klein N, Belyaev A E et al. Effects of γ-irradiation on AlGaN/GaN-based HEMTs[J]. Physica Status Solidi A, 195, 101-105(2003).

[21] Khanal M P, Ozden B, Kim K et al. Electrical and optical characteristics of gamma-ray irradiated AlGaN/GaN high electron mobility transistors[J]. Journal of Vacuum Science & Technology B, 35, 03D107(2017).

[22] XIONG Wei. Study on irradiation failure mechanism and reliability of Si-based GaN power devices[D](2020).

[23] Koley G, Kim H, Eastman L F et al. Electrical bias stress related degradation of AlGaN∕GaN HEMTs[J]. Electronics Letters, 39, 1217-1218(2003).

[24] Saito W, Kuraguchi M, Takada Y et al. Influence of surface defect charge at AlGaN-GaN-HEMT upon Schottky gate leakage current and breakdown voltage[J]. IEEE Transactions on Electron Devices, 52, 159-164(2005).

[25] DONG Shijian, GUO Hongxia, MA Wuying et al. Ionizing radiation damage mechanism and biases correlation of AlGaN/GaN high electron mobility transistor devices[J]. Acta Physica Sinica, 69, 294-302(2020).

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Yiwu QIU, Fengqi GUO, Yanan YIN, Pingwei ZHANG, Xinjie ZHOU. Total ionizing dose effect of enhanced AlGaN/GaN HEMT devices under different bias[J]. NUCLEAR TECHNIQUES, 2023, 46(11): 110502

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Paper Information

Category: Research Articles

Received: Apr. 24, 2023

Accepted: --

Published Online: Dec. 23, 2023

The Author Email:

DOI:10.11889/j.0253-3219.2023.hjs.46.110502

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