Journal of Semiconductors, Volume. 41, Issue 5, 052203(2020)
Mo5+ doping induced interface polarization for improving performance of planar perovskite solar cells
Fig. 1. (Color online) (a) The in-plane conductivity of HTL films with 0–2 mg/mL MoO
Fig. 3. (Color online) (a) Device construction of the planar PSCs, and (b) cross-sectional SEM image of the planar PSC structures without an Ag electrode.
Fig. 4. (Color online) (a) The best
Fig. 5. (Color online) Average photovoltaic parameter for 12 devices: (a) open-circuit voltage (
Fig. 6. (Color online) Nyquist plot of devices with various HTLs (pristine PEDOT:PSS, PEDOT:SS-MoO
Fig. 7. (Color online) (a) OCVD measurements for three types of devices. (b) Schematic of the proposed mechanism for the trap-assisted recombination.
Fig. 8. (Color online) (a) Real part of the dielectric constant as a function of frequency in the dark. (b) Schematic diagram of electric-field distribution in the perovskite device based on PEDOT:PSS-MoO
Get Citation
Copy Citation Text
Yurong Jiang, Yue Yang, Yiting Liu, Shan Yan, Yanxing Feng, Congxin Xia. Mo5+ doping induced interface polarization for improving performance of planar perovskite solar cells[J]. Journal of Semiconductors, 2020, 41(5): 052203
Category: Articles
Received: Mar. 1, 2020
Accepted: --
Published Online: Sep. 10, 2021
The Author Email: