Infrared and Laser Engineering, Volume. 51, Issue 7, 20210435(2022)

Frequency stabilization technology of HCN absorption in 1.5 μm DFB semiconductor laser

Mingfu Zhang, Tianxin Yang, and Chunfeng Ge*
Author Affiliations
  • Key Laboratory of the Ministry of Education on Optoelectronic Information Technology, School of Precision Instrument and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China
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    Figures & Tables(9)
    Schematic diagram of side frequency locking principle
    Schematic diagram of the DFB laser frequency stabilization system
    Normalized spectrum of H13C14N 2v3 rotational-vibration band
    Feedback and partial drive circuit design
    Block diagram of beat frequency system
    Femtosecond optical frequency comb and DFB laser output optical beat frequency signal
    Frequency fluctuation before and after frequency stabilization
    Allen deviation comparison before and after frequency stabilization
    • Table 1. main parameters of DFB laser diodes

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      Table 1. main parameters of DFB laser diodes

      ParameterValue
      Power/mW40-60
      Linewidth/ kHz474
      Central wavelength/nm1549.100
      Temperature tuning coefficient/nm·℃−10.100
      Current tuning coefficient/nm·mA−10.010
      Operation temperature/℃−20-70
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    Mingfu Zhang, Tianxin Yang, Chunfeng Ge. Frequency stabilization technology of HCN absorption in 1.5 μm DFB semiconductor laser[J]. Infrared and Laser Engineering, 2022, 51(7): 20210435

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    Paper Information

    Category: Lasers & Laser optics

    Received: Jun. 28, 2021

    Accepted: --

    Published Online: Dec. 20, 2022

    The Author Email: Chunfeng Ge (gechunfeng@tju.edu.cn)

    DOI:10.3788/IRLA20210435

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