Fig. 1. (a) The device structure and measurement of Cu/MXene/SiO₂/W memristor; (b) surface structure of memristor under metallographic microscope; (c) the scanning electron microscope result of two-dimensional material MXene; (d) the physical mechanism of the Cu/MXene/SiO₂/W memristor under positive voltagestimulus; (e) the neurotransmitter transfer between pre- and postsynaptic membrane after stimulus. (a) Cu/MXene/SiO₂/W忆阻器结构及电学测试示意图; (b)二维材料MXene的扫描电镜图; (b) 金相显微镜下忆阻器表面结构; (d)正向偏压下器件工作机理示意图; (e)受到刺激信号, 突触前膜、突触后膜之间神经递质迁移示意图

Fig. 2. (a) Memristor model reported by HP group; (b) the fitting of experimental data and the simulation data.(a)惠普研究小组提出的忆阻器模型; (b)忆阻器模型仿真数据与实验测试数据拟合

Fig. 3. Neuromorphic circuitry for the emulation of classical conditioning.实现条件反射的神经形态电路

Fig. 4. (a) The signals inputted into the circuit and corresponding output waveform, respectively; (b) the change of current flowing through the memristor against timeduring DC voltage sweeping; (c) the change of current through the memristor M_a during training process. (a)仿真过程施加的信号以及各自对应的结果图; (b)对电路中忆阻器模型进行直流电压扫描, 流经忆阻器的电流随仿真时间的变化; (c)训练过程中, 流经忆阻器M_a的电流随时间的变化