Semiconductor Optoelectronics, Volume. 44, Issue 2, 172(2023)

Development of Large Dynamic and High Sensitivity 1024×1024 EMCCD

WANG Chaomin*, YIN Jun, JIANG Haibo, WANG Tingdong, LIU Changlin, and DING Jinsong
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    References(5)

    [3] [3] Gajar S A, Burke B E. Charge amplification by impact ionization in charge-coupled devices[J]. IEEE Trans. Electron Devices, 1988, 35: 2435-2436.

    [4] [4] Hynecek J. CCM-a new low-noise charge carrier multiplier suitable for detection of charge in small pixel CCD image sensors[J]. IEEE Trans. Electron Devices, 1992, 39: 1972-1975.

    [5] [5] Hynecek J, Nishiwaki T. Excess noise and other important characteristics of low light level imaging using charge multiplying CCDs[J]. IEEE Trans. Electron Devices, 2003, 50: 239-245.

    [6] [6] Robbins M S, Hadwen B J. The noise performance of electron multiplying charge-coupled devices[J]. IEEE Trans. Electron Devices, 2003, 50: 1227-1232.

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    WANG Chaomin, YIN Jun, JIANG Haibo, WANG Tingdong, LIU Changlin, DING Jinsong. Development of Large Dynamic and High Sensitivity 1024×1024 EMCCD[J]. Semiconductor Optoelectronics, 2023, 44(2): 172

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    Paper Information

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    Received: Oct. 28, 2022

    Accepted: --

    Published Online: Aug. 14, 2023

    The Author Email: Chaomin WANG (wangchaomin99@163.com)

    DOI:10.16818/j.issn1001-5868.2022102802

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