Fig. 1. Relationship of medium wave photon absorptivity and absorption layer thickness

Fig. 2. Relationship of long wave quantum efficiency and absorption thickness

Fig. 3. Cross-section schematic of MW/LW two-band HgCdTe infrared detector

Fig. 4. Schematic of the input stage of the dual-band ROIC

Fig. 5. Timing schedule of integration and readout

Fig. 6. SEM characterization of MW/LW dual-band HgCdTe grown by MBE

Fig. 7. Surface morphology of MW/LW dual-band HgCdTe film

Fig. 8. [in Chinese]

Fig. 9. XRD characterization results of MW/LW dual-band HgCdTe film

Fig. 10. The ICP etching effect of the mesa-hole (a) high etching temperature,(b) the ratio of process gas is out of balance,(c)high etching pressure,(d)low etching power,(e)after improvement of the etching process, (f)cross-section schematic of the mesa-hole

Fig. 11. Sidewall passivation effect of the mesa-hole

Fig. 12. The relative spectral response between MW and LW

Fig. 13. Test results of the MW/LW dual-bands HgCdTe FPA (a) response signal map of MW,(b) response signal map of LW