Journal of Infrared and Millimeter Waves, Volume. 40, Issue 4, 427(2021)
Fabrication and characteristics of InAs/GaSb Type-II superlattice infrared detector pixel mesas
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Fig. 1. Schematic diagrams of mesa-structured InAs/GaSb superlattice detectors （a） gate-controlled structure device， （b） device without passivation
Fig. 2. Response spectrum of device at liquid-nitrogen temperature
Fig. 4. The transfer characteristic curves of the gate-controlled devices at -0.05 V bias
Fig. 5. Schematic diagrams of sidewall under （a） electron accumulation and （ b） hole accumulation at surface Note：The red areas indicate high electric field regions
Table 1. List of four InAs/GaSb type-II superlattice detector samples under different fabrication processes
View tableView in ArticleTable 1. List of four InAs/GaSb type-II superlattice detector samples under different fabrication processes
样品编号 钝化 栅控结构 退火 第一组 1 √ √ × 2 √ √ √ 第二组 3 × × × 4 × × √
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Yu-Rong CUI, Zhi-Cheng XU, Min HUANG, Jia-Jia XU, Jian-Xin CHEN, Li HE. Fabrication and characteristics of InAs/GaSb Type-II superlattice infrared detector pixel mesas[J]. Journal of Infrared and Millimeter Waves, 2021, 40(4): 427
Paper Information
Category: Research Articles
Received: Aug. 4, 2020
Accepted: --
Published Online: Sep. 9, 2021
The Author Email: Jian-Xin CHEN (jianxinchen@mail.sitp.ac.cn)
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