Optimizing an interleaved p-n junction to reduce energy dissipation in silicon slow-light modulators

Marco Passoni; Dario Gerace; Liam O’Faolain; Lucio Claudio Andreani

doi:10.1364/PRJ.382620

Photonics Research, Volume. 8, Issue 4, 457(2020)

Optimizing an interleaved p-n junction to reduce energy dissipation in silicon slow-light modulators

Marco Passoni¹, Dario Gerace¹, Liam O’Faolain^2,3, and Lucio Claudio Andreani^1,4、*

Author Affiliations

¹Department of Physics, University of Pavia, 27100 Pavia, Italy

²Centre for Advanced Photonics and Process Analysis, Cork Institute of Technology, Cork, Ireland

³Tyndall National Institute, Cork, Ireland

⁴Institute for Photonics and Nanotechnologies (IFN)-CNR, 20133 Milano, Italy

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Marco Passoni, Dario Gerace, Liam O’Faolain, Lucio Claudio Andreani, "Optimizing an interleaved p-n junction to reduce energy dissipation in silicon slow-light modulators," Photonics Res. 8, 457 (2020)

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Paper Information

Category: Silicon Photonics

Received: Nov. 11, 2019

Accepted: Jan. 12, 2020

Published Online: Mar. 12, 2020

The Author Email: Lucio Claudio Andreani (lucio.andreani@unipv.it)

DOI:10.1364/PRJ.382620

Topics

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